Publications
] , "Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction", Applied Physics Letters, vol. 106, no. 18: AIP Publishing, pp. 183502, 2015.
, "The efficiency challenge of nitride light-emitting diodes for lighting", physica status solidi (a), vol. 212, no. 5, pp. 899–913, 2015.
, "Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN ìdouble miscutî substrates", Applied Physics Express, vol. 8, no. 6: IOP Publishing, pp. 061002, 2015.
, "Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy", Journal of Applied Physics, vol. 117, no. 18: AIP Publishing, pp. 185703, 2015.
, "Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals", Journal of Crystal Growth, vol. 432: Elsevier, pp. 49–53, 2015.
, "Hall and Seebeck measurements estimate the thickness of a (buried) carrier system: Identifying interface electrons in In-doped SnO2 films", Applied Physics Letters, vol. 107, no. 25: AIP Publishing, pp. 252105, 2015.
, "High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 33, no. 5: AVS, pp. 05E128, 2015.
, "High spatial uniformity of photoluminescence spectra in semipolar (20 2 1) plane InGaN/GaN quantum wells", Journal of Applied Physics, vol. 117, no. 2: AIP Publishing, pp. 023111, 2015.
, "High-power blue laser diodes with indium tin oxide cladding on semipolar (20 2 1) GaN substrates", Applied Physics Letters, vol. 106, no. 11: AIP Publishing, pp. 111105, 2015.
, "Impact of carrier localization on radiative recombination times in semipolar (20 2\= 1) plane InGaN/GaN quantum wells", Applied Physics Letters, vol. 107, no. 21: AIP Publishing, pp. 211109, 2015.
, "Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN", Applied Physics Letters, vol. 106, no. 22: AIP Publishing, pp. 222103, 2015.
, "InGaN lattice constant engineering via growth on (In, Ga) N/GaN nanostripe arrays", Semiconductor Science and Technology, vol. 30, no. 10: IOP Publishing, pp. 105020, 2015.
, "Lighting for the 21st century with laser diodes based on non-basal plane orientations of GaN", MRS Communications, vol. 5, no. 3: Cambridge University Press, pp. 463–473, 2015.
, "Low damage dry etch for III-nitride light emitters", Semiconductor Science and Technology, vol. 30, no. 8: IOP Publishing, pp. 085019, 2015.
, "Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate", Photonics Conference (IPC), 2015: IEEE, pp. 581–582, 2015.
, "Low-energy electro-and photo-emission spectroscopy of GaN materials and devices", Journal of Applied Physics, vol. 117, no. 11: AIP Publishing, pp. 112814, 2015.
, "$ m $-Plane GaN Growth on``Double Miscut''Bulk Substrates for Blue Laser Diode Applications", Bulletin of the American Physical Society, vol. 60: APS, 2015.
, Method of controlling stress in group-III nitride films deposited on substrates, sep # " 8", 2015.
, "Molecular beam epitaxy of nitrides for advanced electronic materials", Handbook of Crystal Growth: Thin Films and Epitaxy (Second Edition), pp. 705–754, 2015.
, "Multidimensional Numerical Modeling on the Influence of Random Alloy Fluctuation in InGaN Quantum Well LED to the Transport Behavior", Applied Mathematics and Simulation for Semiconductors, Berlin, WIAS, 03/2015.
, "N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates", Semiconductor Science and Technology, vol. 30, no. 5: IOP Publishing, pp. 055012, 2015.
, Non-polar gallium nitride thin films grown by metalorganic chemical vapor deposition, may # " 26", 2015.