Publications

Found 1586 results
Author Title Type [ Year(Desc)]
2006
Koyama, T., T. Onuma, H. Masui, A. Chakraborty, BA. Haskell, S. Keller, UK. Mishra, JS. Speck, S. Nakamura, SP. DenBaars, et al., "Prospective emission efficiency and in-plane light polarization of nonpolar m-plane In x Ga 1- x N/ Ga N blue light emitting diodes fabricated on freestanding GaN substrates", Applied physics letters, vol. 89, no. 9: AIP, pp. 091906, 2006.
Brown, J. S., G. Koblmüller, R. Averbeck, H. Riechert, and J. S. Speck, "Quadrupole mass spectrometry desorption analysis of Ga adsorbate on AlN (0001)", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 24, no. 6: AVS, pp. 1979–1984, 2006.
Armstrong, A., A. Chakraborty, JS. Speck, SP. DenBaars, UK. Mishra, and SA. Ringel, "Quantitative observation and discrimination of AlGaN-and GaN-related deep levels in Al Ga N/ Ga N heterostructures using capacitance deep level optical spectroscopy", Applied physics letters, vol. 89, no. 26: AIP, pp. 262116, 2006.
Kaeding, JF., H. Asamizu, H. Sato, M. Iza, TE. Mates, SP. DenBaars, JS. Speck, and S. Nakamura, "Realization of high hole concentrations in Mg doped semipolar (10 1\= 1\=) GaN", Applied physics letters, vol. 89, no. 20: AIP, pp. 202104, 2006.
Onuma, T., S. Keller, SP. DenBaars, JS. Speck, S. Nakamura, UK. Mishra, T. Sota, and SF. Chichibu, "Recombination dynamics of a 268 nm emission peak in Al 0.53 In 0.11 Ga 0.36 N/ Al 0.58 In 0.02 Ga 0.40 N multiple quantum wells", Applied Physics Letters, vol. 88, no. 11: AIP, pp. 111912, 2006.
Corrion, A., C. Poblenz, P. Waltereit, T. Palacios, S. Rajan, U. K. Mishra, and J. S. Speck, "Review of recent developments in growth of AlGaN/GaN high-electron mobility transistors on 4H-SiC by plasma-assisted molecular beam epitaxy", IEICE transactions on electronics, vol. 89, no. 7: The Institute of Electronics, Information and Communication Engineers, pp. 906–912, 2006.
Corrion, A., C. Poblenz, P. Waltereit, T. Palacios, S. Rajan, U. K. Mishra, and J. S. Speck, "Special Section on Heterostructure Microelectronics with TWHM2005-GaN-Based Devices-Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by", IEICE Transactions on Electronics, vol. 89, no. 7: Tokyo, Japan: Institute of Electronics, Information and Communication Engineers, c1992-, pp. 906–912, 2006.
Imer, B., F. Wu, M. D. Craven, J. S. Speck, and S. P. DenBaars, "Stability of (1100) m-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition", Japanese journal of applied physics, vol. 45, no. 11R: IOP Publishing, pp. 8644, 2006.
Roder, C., S. Einfeldt, S. Figge, D. Hommel, T. Paskova, B. Monemar, BA. Haskell, PT. Fini, JS. Speck, and S. Nakamura, "Strain in a-plane GaN layers grown on r-plane sapphire substrates", physica status solidi (a), vol. 203, no. 7: Wiley Online Library, pp. 1672–1675, 2006.
Romanov, AE., TJ. Baker, S. Nakamura, JS. Speck, and ERATO/JST. U. C. S. B. Group, "Strain-induced polarization in wurtzite III-nitride semipolar layers", Journal of Applied Physics, vol. 100, no. 2: AIP, pp. 023522, 2006.
Chakraborty, A., K. Choong Kim, F. Wu, B. A. Haskell, S. Keller, J. S. Speck, S. Nakamura, S. P. DenBaars, and U. K. Mishra, "Structural and electroluminescence characteristics of nonpolar light-emitting diodes fabricated on lateral epitaxially overgrown a-Plane GaN", Japanese journal of applied physics, vol. 45, no. 11R: IOP Publishing, pp. 8659, 2006.
Shen, L., T. Palacios, C. Poblenz, A. Corrion, A. Chakraborty, N. Fichtenbaum, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment", IEEE Electron Device Letters, vol. 27, no. 4: IEEE, pp. 214–216, 2006.
Speck, J., T. Baker, and B. Haskell, Wafer separation technique for the fabrication of free-standing (Al, In, Ga) N wafers, 2006.
Dora, Y., S. Han, D. Klenov, P. J. Hansen, K-soo. No, U. K. Mishra, S. Stemmer, and J. S. Speck, "ZrO 2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/ GaN transistors", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 24, no. 2: AVS, pp. 575–581, 2006.
2007
Choi, Y-S., M. Iza, E. Matioli, G. Koblmüller, J. S. Speck, C. Weisbuch, and E. L. Hu, "2.5 λ microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process", Applied Physics Letters, vol. 91, no. 6: AIP, pp. 061120, 2007.
Feezell, D. F., M. C. Schmidt, R. M. Farrell, K-C. Kim, M. Saito, K. Fujito, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, "AlGaN-cladding-free nonpolar InGaN/GaN laser diodes", Japanese journal of applied physics, vol. 46, no. 4L: IOP Publishing, pp. L284, 2007.
Recht, F., L. McCarthy, L. Shen, C. Poblenz, A. Corrion, JS. Speck, and UK. Mishra, "AlGaN/GaN HEMTs with large angle implanted nonalloyed ohmic contacts", Device Research Conference, 2007 65th Annual: IEEE, pp. 37–38, 2007.
Pei, Y., C. Suh, R. Chu, F. Recht, L. Shen, A. Corrion, C. Poblenz, J. Speck, and UK. Mishra, "AlGaN/GaNHEMT with High PAE and Breakdown Voltage Grown by Ammonia MBE", Device Research Conference, 2007 65th Annual: IEEE, pp. 129–130, 2007.
Hashimoto, T., J. S. Speck, and S. Nakamura, Ammonothermal Growth of Bulk GaN for Extended Time, 2007.
Darakchieva, V., T. Paskova, M. Schubert, H. Arwin, PP. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, et al., "Anisotropic strain and phonon deformation potentials in GaN", Physical Review B, vol. 75, no. 19: APS, pp. 195217, 2007.
Newman, S. A., D. S. Kamber, Y. Wu, E. Letts, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Cantilever Epitaxy of AlN using Hydride Vapor Phase Epitaxy", APS Meeting Abstracts, 2007.
Fehlberg, T. B., G. A. Umana-Membreno, C. S. Gallinat, G. Koblmüller, S. Bernardis, B. D. Nener, G. Parish, and J. S. Speck, "Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy", physica status solidi (c), vol. 4, no. 7: Wiley Online Library, pp. 2423–2427, 2007.
Armstrong, A., A. Chakraborty, J. S. Speck, S. P. DenBaars, U. K. Mishra, and S. A. Ringel, "Characterization and Discrimination of AlGaN-and GaN-related Deep Levels in AlGaN/GaN Heterostructures", AIP Conference Proceedings, vol. 893, no. 1: AIP, pp. 223–224, 2007.
Nakamura, S., SP. DenBaars, JS. Speck, MC. Schmidt, KC. Kim, RM. Farrell, DF. Feezell, DA. Cohen, M. Saito, H. Sato, et al., "CK-1-1 Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs", ?????????????????????, vol. 2007, no. 2: ??????????????, 2007.
Armstrong, A., C. Poblenz, UK. Mishra, JS. Speck, and SA. Ringel, "Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy", physica status solidi (b), vol. 244, no. 6: Wiley Online Library, pp. 1867–1871, 2007.

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