Publications
] , "Study of percolation transport in the InGaN/AlGaN LEDs with random alloy fluctuation", Conference on Lasers and Electro-Optics/Pacific Rim: Optical Society of America, pp. 25H2_2, 2015.
, "Schottky contacts to In ${$sub 2$}$ O ${$sub 3$}$", APL Materials, vol. 2, no. 4, 2014.
, "Schottky contacts to In2O3", APL Materials, vol. 2, no. 4: AIP, pp. 046104, 2014.
, "Stacking faults and interface roughening in semipolar (20 2\= 1\=) single InGaN quantum wells for long wavelength emission", Applied Physics Letters, vol. 104, no. 15: AIP, pp. 151901, 2014.
, "Surface structured optical coatings with near-perfect broadband and wide-angle antireflective properties", Nano letters, vol. 14, no. 10: ACS Publications, pp. 5960–5964, 2014.
, "Systematic investigation of the growth rate of β-Ga2O3 (010) by plasma-assisted molecular beam epitaxy", Applied Physics Express, vol. 7, no. 9: IOP Publishing, pp. 095501, 2014.
, "The Seebeck coefficient of In 2 O 3-Inferences on causes of unintentional conductivity and electron effective mass", Verhandlungen der Deutschen Physikalischen Gesellschaft, 2013.
, SELECTIVE DRY ETCHING OF N-FACE (Al, In, Ga) N HETEROSTRUCTURES, apr # " 25", 2013.
, "Semipolar $(${$$\backslash$hbox ${$20$}$$}$$\backslash$bar ${$${$$\backslash$hbox ${$2$}$$}$$}$$\backslash$bar ${$${$$\backslash$hbox ${$1$}$$}$$}$) $ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting", Journal of Display Technology, vol. 9, no. 4: IEEE, pp. 190–198, 2013.
, "Spatially-resolved spectroscopic measurements of Ec- 0.57 eV traps in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 102, no. 19: AIP, pp. 193509, 2013.
, Stefan Hildebrandt Sabine Bahrs, 2013.
, "Study of temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
, "Suppressing void defects in long wavelength semipolar (20 2 1) InGaN quantum wells by growth rate optimization", Applied Physics Letters, vol. 102, no. 9: AIP, pp. 091905, 2013.
, "Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane", Journal of Crystal Growth, vol. 368: Elsevier, pp. 67–71, 2013.
, "Scaled self-aligned N-polar GaN/AlGaN MIS-HEMTs with $ f_ ${$T$}$ $ of 275 GHz", IEEE Electron Device Letters, vol. 33, no. 7: IEEE, pp. 961–963, 2012.
, "Self-aligned N-polar GaN/InAlN MIS-HEMTs with record extrinsic transconductance of 1105 mS/mm", IEEE Electron Device Letters, vol. 33, no. 6: IEEE, pp. 794–796, 2012.
, "Semipolar (20-2-1) Blue and Green InGaN Light-Emitting Diodes", CLEO: Applications and Technology: Optical Society of America, pp. JTh4J–2, 2012.
, "Semipolar (20-2-1) Laser Diodes (λ= 505nm) with Wavelength-Stable InGaN/GaN Quantum Wells", CLEO: Science and Innovations: Optical Society of America, pp. CTu2N–5, 2012.
, "Stress relaxation and critical thickness for misfit dislocation formation in (10 1\= 0) and (30 31\=) InGaN/GaN heteroepitaxy", Applied Physics Letters, vol. 100, no. 17: AIP, pp. 171917, 2012.
, "Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (20 2\= 1) InGaN/GaN heterostructures", Applied Physics Letters, vol. 101, no. 13: AIP, pp. 132102, 2012.
, "Scaling behavior and velocity enhancement in self-aligned N-polar GaN/AlGaN HEMTs with maximum fT of 163 GHz", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 141–142, 2011.
, "Self-aligned technology for N-polar GaN/Al (Ga) N MIS-HEMTs", IEEE Electron Device Letters, vol. 32, no. 1: IEEE, pp. 33–35, 2011.