| Title | Stress relaxation and critical thickness for misfit dislocation formation in (10 1\= 0) and (30 31\=) InGaN/GaN heteroepitaxy |
| Publication Type | Journal Article |
| Year of Publication | 2012 |
| Authors | Hsu, P. Shan, M. T. Hardy, E. C. Young, A. E. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck |
| Journal | Applied Physics Letters |
| Volume | 100 |
| Pagination | 171917 |