Publications

Found 115 results
Author Title Type [ Year(Asc)]
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2005
Baker, T. J., B. A. Haskell, F. Wu, P. T. Fini, J. S. Speck, and S. Nakamura, "Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates", Japanese Journal of Applied Physics, vol. 44, pp. L920, 2005.
Koblmüller, G., J. Brown, R. Averbeck, H. Riechert, P. Pongratz, and J. S. Speck, "Continuous evolution of Ga adlayer coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN", Applied Physics Letters, vol. 86, no. 4: AIP, pp. 041908, 2005.
2004
Green, DS., UK. Mishra, and JS. Speck, "Carbon doping of GaN with CBr 4 in radio-frequency plasma-assisted molecular beam epitaxy", Journal of applied physics, vol. 95, no. 12: AIP, pp. 8456–8462, 2004.
Armstrong, A., D. Green, AR. Arehart, UK. Mishra, JS. Speck, and SA. Ringel, "Carbon-related Deep States in Compensated n-type and Semi-Insulating GaN: C and their Influence on Yellow Luminescence", MRS Online Proceedings Library Archive, vol. 831: Cambridge University Press, 2004.
Katona, TM., MD. Craven, JS. Speck, and SP. DenBaars, "Cathodoluminescence study of deep ultraviolet quantum wells grown on maskless laterally epitaxial overgrown AlGaN", Applied physics letters, vol. 85, no. 8: AIP, pp. 1350–1352, 2004.
2003
Yamamoto, N., H. Itoh, V. Grillo, SF. Chichibu, S. Keller, JS. Speck, SP. DenBaars, UK. Mishra, S. Nakamura, and G. Salviati, "Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope", Journal of applied physics, vol. 94, no. 7: AIP, pp. 4315–4319, 2003.
Yamamoto, N., H. Itoh, V. Grillo, SF. Chichibu, S. Keller, JS. Speck, SP. DenBaars, UK. Mishra, S. Nakamura, and G. Salviati, "Cathodoluminescence characterization of dislocations in gallium nitride using a transmission", Info: Postprints, UC Santa Barbara, 2003.
Craven, M. D., P. Waltereit, F. Wu, J. S. Speck, and S. P. DenBaars, "Characterization of a-plane GaN/(Al, Ga) N multiple quantum wells grown via metalorganic chemical vapor deposition", Japanese journal of applied physics, vol. 42, no. 3A: IOP Publishing, pp. L235, 2003.
Serraiocco, JL., PJ. Hansen, TR. Taylor, JS. Speck, and RA. York, "Compact distributed phase shifters at X-band using BST", Integrated Ferroelectrics, vol. 56, no. 1: Taylor & Francis, pp. 1087–1095, 2003.
Serraiocco, J. L., P. J. Hansen, T. R. Taylor, J. S. Speck, and R. A. York, "Compact ferroelectric reflection phase shifters at X-band", Microwave Symposium Digest, 2003 IEEE MTT-S International, vol. 3: IEEE, pp. 1993–1996, 2003.
Serraiocco, J. L., P. J. Hansen, T. R. Taylor, J. S. Speck, and R. A. York, "Compact ferroelectric reflection phase shifters at X-band", IEEE MTT-S International Microwave Symposium Digest, 2003, June, 2003.
Simpkins, BS., ET. Yu, P. Waltereit, and JS. Speck, "Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride", Journal of applied physics, vol. 94, no. 3: AIP, pp. 1448–1453, 2003.
Roder, C., H. Heinke, D. Hommel, TM. Katona, JS. Speck, and SP. DenBaars, "Crystallographic wing tilt in laterally overgrown GaN", Journal of Physics D: Applied Physics, vol. 36, no. 10A: IOP Publishing, pp. A188, 2003.
2002
Glaser, ER., WE. Carlos, GCB. Braga, JA. Freitas Jr, WJ. Moore, BV. Shanabrook, AE. Wickenden, DD. Koleske, RL. Henry, MW. Bayerl, et al., "Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)", Materials Science and Engineering: B, vol. 93, no. 1-3: Elsevier, pp. 39–48, 2002.
Katona, TM., JS. Speck, and SP. DenBaars, "Control of crystallographic tilt in GaN grown on Si (111) by cantilever epitaxy", Applied Physics Letters, vol. 81, no. 19: AIP, pp. 3558–3560, 2002.
Andrews, AM., and JS. Speck, "Crosshatch surface morphology in mismatched films", Molecular Beam Epitaxy, 2002 International Conference on: IEEE, pp. 23–24, 2002.
2001
Hierro, A., AR. Arehart, B. Heying, M. Hansen, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Capture Kinetics of Electron Traps in MBE-Grown n-GaN", physica status solidi (b), vol. 228, no. 1: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 309–313, 2001.
Hierro, A., M. Hansen, L. Zhao, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Carrier Trapping and Recombination at Point Defects and Dislocations in MOCVD n-GaN", physica status solidi (b), vol. 228, no. 3: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 937–946, 2001.
Link, A., O. Ambacher, IP. Smorchkova, UK. Mishra, JS. Speck, and M. Stutzmann, "Chapter 6: III-Nitrides and Related Materials-6.1 Growth and Physical Properties-Formation and Electronic Transport of 2D Electron and Hole Gases in AlGaN/GaN Heterostructures", Materials Science Forum, vol. 353: Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, pp. 787–790, 2001.
Im, H-J., Y. Ding, JP. Pelz, B. Heying, and JS. Speck, "Characterization of individual threading dislocations in GaN using ballistic electron emission microscopy", Physical review letters, vol. 87, no. 10: APS, pp. 106802, 2001.
Im, HJ., Y. Ding, JP. Pelz, B. Heying, and JS. Speck, "Condensed Matter: Electronic Properties, etc.-Characterization of Individual Threading Dislocations in GaN Using Ballistic Electron Emission Microscopy", Physical Review Letters, vol. 87, no. 10: [Woodbury, NY, etc.] American Physical Society., pp. 106802–106802, 2001.
2000
Saxler, A., P. Debray, R. Perrin, S. Elhamri, WC. Mitchel, CR. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, et al., "Characterization of an AlGaN/GaN two-dimensional electron gas structure", Journal of Applied Physics, vol. 87, no. 1: AIP, pp. 369–374, 2000.
Heying, B., R. Averbeck, LF. Chen, E. Haus, H. Riechert, and JS. Speck, "Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 88, no. 4: AIP, pp. 1855–1860, 2000.
Lee, H., JA. Johnson, JS. Speck, and PM. Petroff, "Controlled ordering and positioning of InAs self-assembled quantum dots", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 18, no. 4: AVS, pp. 2193–2196, 2000.
1999
Rosner, SJ., G. Girolami, H. Marchand, PT. Fini, JP. Ibbetson, L. Zhao, S. Keller, UK. Mishra, SP. DenBaars, and JS. Speck, "Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride", Applied physics letters, vol. 74, no. 14: AIP, pp. 2035–2037, 1999.

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