Control of crystallographic tilt in GaN grown on Si (111) by cantilever epitaxy

TitleControl of crystallographic tilt in GaN grown on Si (111) by cantilever epitaxy
Publication TypeJournal Article
Year of Publication2002
AuthorsKatona, TM., JS. Speck, and SP. DenBaars
JournalApplied Physics Letters
Volume81
Pagination3558–3560