Publications
] , "Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy", Journal of Applied Physics, vol. 103, no. 1: AIP, pp. 014305, 2008.
, "White X-ray microdiffraction analysis of defects, strain and tilts in a free standing GaN film", physica status solidi (b), vol. 245, no. 5: Wiley Online Library, pp. 899–902, 2008.
, "Defect-mediated surface morphology of nonpolar m-plane GaN", Applied physics letters, vol. 90, no. 12: AIP, pp. 121119, 2007.
, "Edgar, JH, see Lu, P. 300 (2007) 336 Edwards, PR, see Rizzi, F. 300 (2007) 254 Egawa, S., see Honda, T. 300 (2007) 90 El Jani, B., see Fitouri, H. 300 (2007) 347 Epelbaum, BM, see Bickermann, M. 300 (2007) 299", Journal of Crystal Growth, vol. 300, pp. 555–561, 2007.
, "Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers", Journal of crystal growth, vol. 300, no. 1: Elsevier, pp. 233–238, 2007.
, "Papers from the 34th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces-Complex Oxides-Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1-xN/GaN multiple", Journal of Vacuum Science and Technology-Section B, vol. 25, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 1524–1528, 2007.
, "Progress in the growth of nonpolar gallium nitride", physica status solidi (b), vol. 244, no. 8: Wiley Online Library, pp. 2847–2858, 2007.
, "Radiative and nonradiative lifetimes in nonpolar m-plane In x Ga 1- x N/ Ga N multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 25, no. 4: AVS, pp. 1524–1528, 2007.
, "Exciton dynamics in nonpolar (11$$\backslash$bar 2 $0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", physica status solidi (c), vol. 3, no. 6: WILEY-VCH Verlag, pp. 2082–2086, 2006.
, "Optical properties of nonpolar a-plane GaN layers", Superlattices and Microstructures, vol. 40, no. 4-6: Academic Press, pp. 253–261, 2006.
, "Photoluminescence of a-plane GaN: comparison between MOCVD and HVPE grown layers", physica status solidi (c), vol. 3, no. 6: Wiley Online Library, pp. 1499–1502, 2006.
, "Prospective emission efficiency and in-plane light polarization of nonpolar m-plane In x Ga 1- x N/ Ga N blue light emitting diodes fabricated on freestanding GaN substrates", Applied physics letters, vol. 89, no. 9: AIP, pp. 091906, 2006.
, "Strain in a-plane GaN layers grown on r-plane sapphire substrates", physica status solidi (a), vol. 203, no. 7: Wiley Online Library, pp. 1672–1675, 2006.
, "Defect reduction in (1 1\= 00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy", Applied Physics Letters, vol. 86, no. 11: AIP, pp. 111917, 2005.
, "Demonstration of a semipolar (101¯3¯) In Ga N/ Ga N green light emitting diode", Applied Physics Letters, vol. 87, no. 23: AIP, pp. 231110, 2005.
, "Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques", Applied Physics Letters, vol. 86, no. 2: AIP, pp. 021914, 2005.
, "Localized exciton dynamics in nonpolar (11 2\= 0) In x Ga 1- x N multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", Applied Physics Letters, vol. 86, no. 15: AIP, pp. 151918, 2005.
, "Reduction of bound-state and nonradiative defect densities in nonpolar (11&2macr; 0) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique", physica status solidi (c), vol. 2, no. 7: WILEY-VCH Verlag, pp. 2700–2703, 2005.
, "Improved quantum efficiency in nonpolar (112Ø0) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth", Applied physics letters, vol. 84, no. 19: AIP, pp. 3768–3770, 2004.
, "Nonpolar InGaN/ GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak", Applied Physics Letters, vol. 85, no. 22: AIP, pp. 5143–5145, 2004.
, "Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy", Applied physics letters, vol. 83, no. 4: AIP, pp. 644–646, 2003.
, "Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy", Applied Physics Letters, vol. 83, no. 8: AIP, pp. 1554–1556, 2003.