Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy

TitleStructural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy
Publication TypeJournal Article
Year of Publication2003
AuthorsHaskell, BA., F. Wu, S. Matsuda, MD. Craven, PT. Fini, SP. DenBaars, JS. Speck, and S. Nakamura
JournalApplied Physics Letters
Volume83
Pagination1554–1556