Publications

Found 174 results
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2009
Miller, N., J. Ager, R. Jones, H. Smith, K. Man Yu, E. Haller, W. Walukiewicz, W. Schaff, C. Gallinat, G. Koblmüller, et al., "Thermopower of n-and p-type InN", APS Meeting Abstracts, 2009.
Xu, G., Y. J. Ding, H. Zhao, M. Jamil, N. Tansu, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, F. K. Hopkins, et al., "THz generation from InN films based on interference between optical rectification and photocurrent surge", Conference on Lasers and Electro-Optics: Optical Society of America, pp. CTuG5, 2009.
Xu, G., Y. J. Ding, H. Zhao, G. Liu, M. Jamil, N. Tansu, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, et al., "THz generation from InN films due to destructive interference between optical rectification and photocurrent surge", Semiconductor Science and Technology, vol. 25, no. 1: IOP Publishing, pp. 015004, 2009.
Uedono, A., S. Ishibashi, S. Keller, C. Moe, P. Cantu, TM. Katona, DS. Kamber, Y. Wu, E. Letts, SA. Newman, et al., "Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation", Journal of Applied Physics, vol. 105, no. 5: AIP, pp. 054501, 2009.
2010
Kelchner, K. M., R. M. Farrell, Y-. Da Lin, P. Shan Hsu, M. T. Hardy, F. Wu, D. A. Cohen, H. Ohta, J. S. Speck, S. Nakamura, et al., "Continuous-wave operation of pure blue AlGaN-cladding-free nonpolar InGaN/GaN laser diodes", Applied Physics Express, vol. 3, no. 9: IOP Publishing, pp. 092103, 2010.
Farrell, RM., DA. Haeger, X. Chen, M. Iza, A. Hirai, KM. Kelchner, K. Fujito, A. Chakraborty, S. Keller, SP. DenBaars, et al., "Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes", Journal of Crystal Growth, vol. 313, no. 1: Elsevier, pp. 1–7, 2010.
Raring, J. W., M. C. Schmidt, C. Poblenz, Y-C. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, et al., "High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates", Applied physics express, vol. 3, no. 11: IOP Publishing, pp. 112101, 2010.
Raring, J. W., E. M. Hall, M. C. Schmidt, C. Poblenz, B. Li, N. Pfister, D. F. Feezell, R. Craig, J. S. Speck, S. P. DenBaars, et al., "High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes", Gallium Nitride Materials and Devices V, vol. 7602: International Society for Optics and Photonics, pp. 760218, 2010.
Miller, N., JW. Ager III, HM. Smith III, MA. Mayer, KM. Yu, EE. Haller, W. Walukiewicz, WJ. Schaff, C. Gallinat, G. Koblmüller, et al., "Hole transport and photoluminescence in Mg-doped InN", Journal of Applied Physics, vol. 107, no. 11: AIP, pp. 113712, 2010.
Rauch, C., F. Reurings, F. Tuomisto, TD. Veal, C. F. McConville, H. Lu, WJ. Schaff, CS. Gallinat, G. Koblmüller, JS. Speck, et al., "In-vacancies in Si-doped InN", physica status solidi (a), vol. 207, no. 5: WILEY-VCH Verlag, pp. 1083–1086, 2010.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura, and others, Method for improved growth of semipolar (Al, In, Ga, B) N, 2010.
Dasgupta, S., Y. Pei, B. L. Swenson, S. Keller, J. S. Speck, U. K. Mishra, and others, "N-polar GaN/AlN MIS-HEMT for Ka-band power applications", IEEE Electron Device Letters, vol. 31, no. 12: IEEE, pp. 1437–1439, 2010.
Mishra, U. K., M. Hoi Wong, S. Dasgupta, D. F. Brown, B. L. Swenson, S. Keller, J. S. Speck, and others, "N-polar GaN-based MIS-HEMTs for mixed signal applications", Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International: IEEE, pp. 1130–1133, 2010.
Raethel, J., P. Schley, E. Sakalauskas, G. Gobsch, R. Mueller, T. A. Klar, J. Pezoldt, R. Goldhahn, G. Koblmueller, J. S. Speck, et al., "Optical anisotropy of a-and m-plane InN grown on free-standing GaN substrates", Verhandlungen der Deutschen Physikalischen Gesellschaft, 2010.
Farrell, RM., DA. Haeger, X. Chen, CS. Gallinat, RW. Davis, M. Cornish, K. Fujito, S. Keller, SP. DenBaars, S. Nakamura, et al., "Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates", Applied Physics Letters, vol. 96, no. 23: AIP, pp. 231907, 2010.
Huang, C-Y., A. Tyagi, Y-. Da Lin, M. T. Hardy, P. Shan Hsu, K. Fujito, J-S. Ha, H. Ohta, J. S. Speck, S. P. DenBaars, et al., "Propagation of spontaneous emission in birefringent m-axis oriented semipolar (1122)(Al, In, Ga) N waveguide structures", Japanese Journal of Applied Physics, vol. 49, no. 1R: IOP Publishing, pp. 010207, 2010.
Dasgupta, S., A. Raman, JS. Speck, U. K. Mishra, and others, "Room temperature operation and DC characteristics of InAlN/GaN/AlGaN Hot Electron Transistors with common base transfer ratio, α= 0.97", Device Research Conference (DRC), 2010: IEEE, pp. 133–134, 2010.
Singisetti, U., M. Hoi Wong, S. Dasgupta, B. L. Swenson, B. J. Thibeault, J. S. Speck, U. K. Mishra, and others, "Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth", Device Research Conference (DRC), 2010: IEEE, pp. 191–192, 2010.
Raring, J. W., E. M. Hall, M. C. Schmidt, C. Poblenz, B. Li, N. Pfister, D. Kebort, Y-C. Chang, D. F. Feezell, R. Craig, et al., "State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes", Laser Technology for Defense and Security VI, vol. 7686: International Society for Optics and Photonics, pp. 76860L, 2010.
Dasgupta, S., D. F. Brown, S. Keller, J. S. Speck, U. K. Mishra, and others, "T-gate technology for N-polar GaN-based self-aligned MIS-HEMTs with state-of-the-art f MAX of 127 GHz: Pathway towards scaling to 30nm GaN HEMTs", Device Research Conference (DRC), 2010: IEEE, pp. 155–156, 2010.
Miller, N., JW. Ager III, HM. Smith III, KM. Yu, EE. Haller, W. Walukiewicz, WJ. Schaff, C. Gallinat, J. Speck, and others, "Thermopower of parallel conducting structures", APS March Meeting Abstracts, 2010.
2011
Farrell, R. M., D. A. Haeger, P. Shan Hsu, M. T. Hardy, K. M. Kelchner, K. Fujito, D. F. Feezell, U. K. Mishra, S. P. DenBaars, J. S. Speck, et al., "AlGaN-cladding-free m-plane InGaN/GaN laser diodes with p-type AlGaN etch stop layers", Applied physics express, vol. 4, no. 9: IOP Publishing, pp. 092105, 2011.
Hsu, P. Shan, J. Sonoda, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, E. C. Young, A. E. Romanov, K. Fujito, H. Ohta, et al., "Blue InGaN/GaN laser diodes grown on (33$$\backslash$bar 3$\backslash$bar 1$) free-standing GaN substrates", physica status solidi (c), vol. 8, no. 7-8: WILEY-VCH Verlag, pp. 2390–2392, 2011.
Hardy, MT., RM. Farrell, P. S. Hsu, DA. Haeger, K. Kelchner, K. Fujito, A. Chakraborty, DA. Cohen, S. Nakamura, JS. Speck, et al., "Effect of n-AlGaN cleave assistance layers on the morphology of c-plane cleaved facets for m-plane InGaN/GaN laser diodes", physica status solidi (c), vol. 8, no. 7-8: Wiley Online Library, pp. 2226–2228, 2011.
Singisetti, U., M. Hoi Wong, S. Dasgupta, B. Swenson, B. J. Thibeault, J. S. Speck, U. K. Mishra, and others, "Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth", IEEE Electron Device Letters, vol. 32, no. 2: IEEE, pp. 137–139, 2011.

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