| Title | In-vacancies in Si-doped InN |
| Publication Type | Journal Article |
| Year of Publication | 2010 |
| Authors | Rauch, C., F. Reurings, F. Tuomisto, TD. Veal, C. F. McConville, H. Lu, WJ. Schaff, CS. Gallinat, G. Koblmüller, JS. Speck, and others |
| Journal | physica status solidi (a) |
| Volume | 207 |
| Pagination | 1083–1086 |