Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth

TitleScalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth
Publication TypeConference Paper
Year of Publication2010
AuthorsSingisetti, U., M. Hoi Wong, S. Dasgupta, B. L. Swenson, B. J. Thibeault, J. S. Speck, U. K. Mishra, and others
Conference NameDevice Research Conference (DRC), 2010
PublisherIEEE