Publications

Found 158 results
Author Title Type [ Year(Desc)]
Filters: Author is Mishra, UK  [Clear All Filters]
2001
Smorchkova, IP., L. Chen, T. Mates, L. Shen, S. Heikman, B. Moran, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "AlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy", Journal of Applied Physics, vol. 90, no. 10: AIP, pp. 5196–5201, 2001.
Hierro, A., AR. Arehart, B. Heying, M. Hansen, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Capture Kinetics of Electron Traps in MBE-Grown n-GaN", physica status solidi (b), vol. 228, no. 1: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 309–313, 2001.
Hierro, A., M. Hansen, L. Zhao, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Carrier Trapping and Recombination at Point Defects and Dislocations in MOCVD n-GaN", physica status solidi (b), vol. 228, no. 3: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 937–946, 2001.
Link, A., O. Ambacher, IP. Smorchkova, UK. Mishra, JS. Speck, and M. Stutzmann, "Chapter 6: III-Nitrides and Related Materials-6.1 Growth and Physical Properties-Formation and Electronic Transport of 2D Electron and Hole Gases in AlGaN/GaN Heterostructures", Materials Science Forum, vol. 353: Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, pp. 787–790, 2001.
McCarthy, L., I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, SP. DenBaars, MJW. Rodwell, and UK. Mishra, "Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors", Applied Physics Letters, vol. 78, no. 15: AIP, pp. 2235–2237, 2001.
Elsass, CR., C. Poblenz, B. Heying, P. Fini, PM. Petroff, SP. DenBaars, UK. Mishra, and JS. Speck, "Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 233, no. 4: North-Holland, pp. 709–716, 2001.
Marchand, H., L. Zhao, N. Zhang, B. Moran, R. Coffie, UK. Mishra, JS. Speck, SP. DenBaars, and JA. Freitas, "Metalorganic chemical vapor deposition of GaN on Si (111): Stress control and application to field-effect transistors", journal of Applied Physics, vol. 89, no. 12: AIP, pp. 7846–7851, 2001.
Hierro, A., AR. Arehart, B. Heying, M. Hansen, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 1)-Point defects and impurities in GaN-Capture Kinetics", Physica Status Solidi-B-Basic Research, vol. 228, no. 1: Berlin: Akademie-Verlag, 1971-, pp. 309–314, 2001.
2003
Yamamoto, N., H. Itoh, V. Grillo, SF. Chichibu, S. Keller, JS. Speck, SP. DenBaars, UK. Mishra, S. Nakamura, and G. Salviati, "Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope", Journal of applied physics, vol. 94, no. 7: AIP, pp. 4315–4319, 2003.
Yamamoto, N., H. Itoh, V. Grillo, SF. Chichibu, S. Keller, JS. Speck, SP. DenBaars, UK. Mishra, S. Nakamura, and G. Salviati, "Cathodoluminescence characterization of dislocations in gallium nitride using a transmission", Info: Postprints, UC Santa Barbara, 2003.
Keller, S., P. Waltereit, P. Cantu, UK. Mishra, JS. Speck, and SP. DenBaars, "Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition", Optical Materials, vol. 23, no. 1-2: North-Holland, pp. 187–195, 2003.
Armstrong, A., AR. Arehart, SA. Ringel, B. Moran, SP. DenBaars, UK. Mishra, and JS. Speck, "Identification of carbon-related bandgap states in GaN grown by MOCVD", MRS Online Proceedings Library Archive, vol. 798: Cambridge University Press, 2003.
Armstrong, A., AR. Arehart, B. Moran, SP. DenBaars, UK. Mishra, JS. Speck, and SA. Ringel, "Impact of growth pressure on defects in GaN grown by metalorganic chemical vapor deposition", Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on: IEEE, pp. 42–48, 2003.
Arehart, AR., C. Poblenz, B. Heying, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Influence of Growth Parameters on the Deep Level Spectrum in MBE-Grown n-GaN", MRS Online Proceedings Library Archive, vol. 798: Cambridge University Press, 2003.
Jena, D., S. Heikman, JS. Speck, UK. Mishra, A. Link, and O. Ambacher, "Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization-doped 3D electron slabs in graded-AlGaN", physica status solidi (c), no. 7: Wiley Online Library, pp. 2339–2342, 2003.
Winzer, A. T., R. Goldhahn, C. Buchheim, O. Ambacher, A. Link, M. Stutzmann, Y. Smorchkova, UK. Mishra, and JS. Speck, "Photoreflectance studiesof N-and Ga-face AlGaN/GaN heterostructures confininga polarisation induced 2DEG", physica status solidi (b), vol. 240, no. 2: Wiley Online Library, pp. 380–383, 2003.
Green, DS., E. Haus, F. Wu, L. Chen, UK. Mishra, and JS. Speck, "Polarity control during molecular beam epitaxy growth of Mg-doped GaN", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 21, no. 4: AVS, pp. 1804–1811, 2003.

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