Publications

Found 673 results
Author Title Type [ Year(Asc)]
Filters: Author is Speck, James S  [Clear All Filters]
2015
Young, E. C., B. P. Yonkee, F. Wu, B. K. Saifaddin, D. A. Cohen, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic () AlGaN/GaN buffer layers", Journal of Crystal Growth, vol. 425: North-Holland, pp. 389–392, 2015.
Young, E. C., B. P. Yonkee, F. Wu, B. K. Saifaddin, D. A. Cohen, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (202¯ 1) AlGaN/GaN buffer layers", Journal of Crystal Growth: Elsevier BV, 2015.
Kaun, S. W., F. Wu, J. S. Speck, and others, "β-(Al ${$sub x$}$ Ga ${$sub 1- x$}$)${$sub 2$}$ O ${$sub 3$}$/Ga ${$sub 2$}$ O ${$sub 3$}$(010) heterostructures grown on β-Ga ${$sub 2$}$ O ${$sub 3$}$(010) substrates by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, vol. 33, no. 4, 2015.
Kaun, S. W., F. Wu, and J. S. Speck, "β-(AlxGa1- x) 2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 33, no. 4: AVS, pp. 041508, 2015.
2014
Da Lin, Y-., H. Ohta, S. Nakamura, S. P. DenBaars, and J. S. Speck, Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes, jun # " 24", 2014.
Ohta, H., F. Wu, A. Tyagi, A. Chakraborty, J. S. Speck, S. P. DenBaars, S. Nakamura, and E. C. Young, Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations, 2014.
Feneberg, M., C. Lidig, K. Lange, M. E. White, M. Y. Tsai, J. S. Speck, O. Bierwagen, and R. Goldhahn, "Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry", physica status solidi (a), vol. 211, no. 1: Wiley Online Library, pp. 82–86, 2014.
Hu, Y-L., E. Rind, and J. S. Speck, "Antiphase boundaries and rotation domains in In2O3 (001) films grown on yttria-stabilized zirconia (001)", Journal of Applied Crystallography, vol. 47, no. 1: International Union of Crystallography, pp. 443–448, 2014.
Mazumder, B., X. Liu, R. Yeluri, F. Wu, U. K. Mishra, and J. S. Speck, "Atom probe tomography studies of Al2O3 gate dielectrics on GaN", Journal of Applied Physics, vol. 116, no. 13: AIP Publishing, pp. 134101, 2014.
Zhao, Y., F. Wu, T-J. Yang, Y-R. Wu, S. Nakamura, and J. S. Speck, "Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells", Applied Physics Express, vol. 7, no. 2: IOP Publishing, pp. 025503, 2014.
Ahmadi, E., H. Chalabi, S. W. Kaun, R. Shivaraman, J. S. Speck, and U. K. Mishra, "Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment", Journal of Applied Physics, vol. 116, no. 13: AIP Publishing, pp. 133702, 2014.
Piccardo, M., L. Martinelli, J. Iveland, N. Young, S. P. DenBaars, S. Nakamura, J. S. Speck, C. Weisbuch, and J. Peretti, "Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy", Physical Review B, vol. 89, no. 23: APS, pp. 235124, 2014.
Zhang, Z., C. M. Jackson, A. R. Arehart, B. McSkimming, J. S. Speck, and S. A. Ringel, "Direct Determination of Energy Band Alignments of Ni/Al 2 O 3/GaN MOS Structures Using Internal Photoemission Spectroscopy", Journal of electronic materials, vol. 43, no. 4: Springer US, pp. 828–832, 2014.
Craven, M. D., S. P. DenBaars, J. S. Speck, and S. Nakamura, Dislocation reduction in non-polar III-nitride thin films, 2014.
Mogilatenko, A., H. Kirmse, O. Bierwagen, M. Schmidbauer, M-Y. Tsai, I. Häusler, M. E. White, and J. S. Speck, "Effect of heavy Ga doping on defect structure of SnO2 layers", physica status solidi (a), vol. 211, no. 1: Wiley Online Library, pp. 87–92, 2014.
Ahmadi, E., R. Shivaraman, F. Wu, S. Wienecke, S. W. Kaun, S. Keller, J. S. Speck, and U. K. Mishra, "Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime", Applied Physics Letters, vol. 104, no. 7: AIP, pp. 072107, 2014.
Von Dollen, P., S. Pimputkar, and J. S. Speck, "Es werde Licht–mit Galliumnitrid: der Nobelpreis für Physik 2014", Angewandte Chemie, vol. 126, no. 51: Wiley Online Library, pp. 14198–14200, 2014.
Woodward, N., R. Enck, C. S. Gallinat, L. E. Rodak, G. D. Metcalfe, J. S. Speck, H. Shen, and M. Wraback, "Evidence of lateral electric fields in c-plane III-V nitrides via terahertz emission", physica status solidi (c), vol. 11, no. 3-4: Wiley Online Library, pp. 686–689, 2014.
Chakraborty, A., B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition, 2014.
Kaun, S. W., E. Ahmadi, B. Mazumder, F. Wu, E. C. H. Kyle, P. G. Burke, U. K. Mishra, and J. S. Speck, "GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 29, no. 4: IOP Publishing, pp. 045011, 2014.
Okumura, H., B. M. McSkimming, T. Huault, C. Chaix, and J. S. Speck, "Growth diagram of N-face GaN (000 1) grown at high rate by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 104, no. 1: AIP, pp. 012111, 2014.
Imer, B. M., J. S. Speck, S. P. DenBaars, and S. Nakamura, Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD), 2014.
Saito, M., S-ichiro. Kawabata, D. S. Kamber, S. P. DenBaars, J. S. Speck, and S. Nakamura, Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same, 2014.
Kyle, E. C. H., S. W. Kaun, P. G. Burke, F. Wu, Y-R. Wu, and J. S. Speck, "High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy", Journal of applied physics, vol. 115, no. 19: AIP, pp. 193702, 2014.
Peretti, J., C. Weisbuch, J. Iveland, M. Piccardo, L. Martinelli, and J. S. Speck, "Identification of Auger effect as the dominant mechanism for efficiency droop of LEDs", Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, vol. 9003: International Society for Optics and Photonics, pp. 90030Z, 2014.

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