Growth diagram of N-face GaN (000 1) grown at high rate by plasma-assisted molecular beam epitaxy

TitleGrowth diagram of N-face GaN (000 1) grown at high rate by plasma-assisted molecular beam epitaxy
Publication TypeJournal Article
Year of Publication2014
AuthorsOkumura, H., B. M. McSkimming, T. Huault, C. Chaix, and J. S. Speck
JournalApplied Physics Letters
Volume104
Pagination012111