Publications

Found 44 results
Author Title Type [ Year(Asc)]
Filters: Author is Speck, James S and First Letter Of Title is G  [Clear All Filters]
2018
Fireman, MN., H. Li, S. Keller, U. K. Mishra, and J. S. Speck, "Growth of N-polar GaN by ammonia molecular beam epitaxy", Journal of Crystal Growth, vol. 481: North-Holland, pp. 65–70, 2018.
2017
Ahmadi, E., O. S. Koksaldi, S. W. Kaun, Y. Oshima, D. B. Short, U. K. Mishra, and J. S. Speck, "Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy", Applied Physics Express, vol. 10, no. 4: IOP Publishing, pp. 041102, 2017.
Lee, C., C. Shen, C. Cozzan, R. M. Farrell, J. S. Speck, S. Nakamura, B. S. Ooi, and S. P. DenBaars, "Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors", Optics express, vol. 25, no. 15: Optical Society of America, pp. 17480–17487, 2017.
Oshima, Y., E. Ahmadi, S. Kaun, F. Wu, and J. S. Speck, "Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 33, no. 1: IOP Publishing, pp. 015013, 2017.
Cramer, R. C., B. Bonef, J. English, C. E. Dreyer, C. G. Van de Walle, and J. S. Speck, "Growth of coherent BGaN films using BBr3 gas as a boron source in plasma assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 35, no. 4: AVS, pp. 041509, 2017.
2016
Dreyer, C. E., A. Alkauskas, J. L. Lyons, J. S. Speck, and C. G. Van de Walle, "Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters", Applied Physics Letters, vol. 108, no. 14: AIP Publishing, pp. 141101, 2016.
Shen, C., J. T. Leonard, E. C. Young, T. Khee Ng, S. P. DenBaars, J. S. Speck, S. Nakamura, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "GHz modulation bandwidth from single-longitudinal mode violet-blue VCSEL using nonpolar InGaN/GaN QWs", CLEO: Science and Innovations: Optical Society of America, pp. STh1L–2, 2016.
Shen, C., C. Lee, T. Khee Ng, J. S. Speck, S. Nakamura, S. P. DenBaars, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, "GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode", Photonics Conference (IPC), 2016 IEEE: IEEE, pp. 813–814, 2016.
2014
Kaun, S. W., E. Ahmadi, B. Mazumder, F. Wu, E. C. H. Kyle, P. G. Burke, U. K. Mishra, and J. S. Speck, "GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 29, no. 4: IOP Publishing, pp. 045011, 2014.
Okumura, H., B. M. McSkimming, T. Huault, C. Chaix, and J. S. Speck, "Growth diagram of N-face GaN (000 1) grown at high rate by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 104, no. 1: AIP, pp. 012111, 2014.
Imer, B. M., J. S. Speck, S. P. DenBaars, and S. Nakamura, Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD), 2014.
2013
DenBaars, S. P., S. Nakamura, and J. S. Speck, "Gallium nitride based light emitting diodes (LEDs) for energy efficient lighting and displays", Electronics, Communications and Photonics Conference (SIECPC), 2013 Saudi International: IEEE, pp. 1–13, 2013.
Zhao, Y., S. Ho Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Green semipolar (2021) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth", Applied Physics Express, vol. 6, no. 6: IOP Publishing, pp. 062102, 2013.
Pimputkar, S., and J. S. Speck, Growth of bulk group-iii nitride crystals after coating them with a group-iii metal and an alkali metal, 2013.
Haskell, B. A., P. T. Fini, S. Matsuda, M. D. Craven, S. P. DenBaars, J. S. Speck, and S. Nakamura, Growth of planar, non-polar, group-III nitride films, 2013.
2012
Pimputkar, S., J. S. Speck, and S. Nakamura, Group-iii nitride crystal ammonothermally grown using an initially off-oriented non-polar or semi-polar growth surface of a group-iii nitride seed crystal, 2012.
Dasgupta, S., F. Wu, J. S. Speck, U. K. Mishra, and others, "Growth and Characterization of N-Polar GaN Films on Si (111) by Plasma Assisted Molecular Beam Epitaxy", Japanese Journal of Applied Physics, vol. 51, no. 11R: IOP Publishing, pp. 115503, 2012.
2011
Kamber, D. S., S. Pimputkar, M. Saito, S. P. DenBaars, J. S. Speck, and S. Nakamura, Group-iii nitride monocrystal with improved purity and method of producing the same, 2011.
Keller, S., Y. Dora, S. Chowdhury, F. Wu, X. Chen, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon", physica status solidi (c), vol. 8, no. 7-8: Wiley Online Library, pp. 2086–2088, 2011.
Haskell, B. A., M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Growth of reduced dislocation density non-polar gallium nitride, 2011.
Dasgupta, S., S. Choi, F. Wu, J. S. Speck, U. K. Mishra, and others, "Growth, structural, and electrical characterizations of N-polar InAlN by plasma-assisted molecular beam epitaxy", Applied physics express, vol. 4, no. 4: IOP Publishing, pp. 045502, 2011.
Chung, R. B., F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Growth study and impurity characterization of AlxIn1- xN grown by metal organic chemical vapor deposition", Journal of Crystal Growth, vol. 324, no. 1: North-Holland, pp. 163–167, 2011.
2010
Pimputkar, S., D. S. Kamber, M. Saito, S. P. DenBaars, J. S. Speck, and S. Nakamura, Group-iii nitride monocrystal with improved crystal quality grown on an etched-back seed crystal and method of producing the same, 2010.
Brown, D. F., S. Keller, T. E. Mates, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition", Journal of Applied Physics, vol. 107, no. 3: AIP, pp. 033509, 2010.
Kamber, D. S., S. Nakamura, and J. S. Speck, Growth and manufacture of reduced dislocation density and free-standing aluminum nitride films by hydride vapor phase epitaxy, mar # " 18", 2010.

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