Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy

TitleGrowth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy
Publication TypeJournal Article
Year of Publication2017
AuthorsOshima, Y., E. Ahmadi, S. Kaun, F. Wu, and J. S. Speck
JournalSemiconductor Science and Technology
Volume33
Pagination015013