Growth and Characterization of N-Polar GaN Films on Si (111) by Plasma Assisted Molecular Beam Epitaxy

TitleGrowth and Characterization of N-Polar GaN Films on Si (111) by Plasma Assisted Molecular Beam Epitaxy
Publication TypeJournal Article
Year of Publication2012
AuthorsDasgupta, S., F. Wu, J. S. Speck, U. K. Mishra, and others
JournalJapanese Journal of Applied Physics
Volume51
Pagination115503