Publications
] , "High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates", Applied Physics Letters, vol. 103, no. 17: AIP, pp. 173903, 2013.
, "Impact of proton irradiation on deep level states in n-GaN", Applied Physics Letters, vol. 103, no. 4: AIP, pp. 042102, 2013.
, "Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates", Journal of Applied Physics, vol. 113, no. 6: AIP, pp. 063504, 2013.
, "Near-field investigation of spatial variations of (20 2\= 1\=) InGaN quantum well emission spectra", Applied Physics Letters, vol. 103, no. 13: AIP, pp. 131116, 2013.
, "Optical properties of extended and localized states in m-plane InGaN quantum wells", Applied Physics Letters, vol. 102, no. 10: AIP, pp. 101102, 2013.
, "Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells", Applied Physics Letters, vol. 103, no. 11: AIP, pp. 111107, 2013.
, "Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (20 2 1) GaN substrates", Applied Physics Letters, vol. 103, no. 15: AIP, pp. 151112, 2013.
, "Reduction of carbon proximity effects by including AlGaN back barriers in HEMTs on free-standing GaN", Electronics Letters, vol. 49, no. 14: IET Digital Library, pp. 893–895, 2013.
, "Spatially-resolved spectroscopic measurements of Ec- 0.57 eV traps in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 102, no. 19: AIP, pp. 193509, 2013.
, "Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane", Journal of Crystal Growth, vol. 368: Elsevier, pp. 67–71, 2013.
, "Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs", IEEE Electron Device Letters, vol. 33, no. 5: IEEE, pp. 658–660, 2012.
, "Advances in GaN semiconductors for energy efficient solid state lighting", Photonics Conference (IPC), 2012 IEEE: IEEE, pp. 427–428, 2012.
, "Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 100, no. 8: AIP, pp. 082103, 2012.
, "Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures", Applied Physics Letters, vol. 101, no. 9: AIP, pp. 091601, 2012.
, "Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells", Applied Physics Letters, vol. 101, no. 18: AIP, pp. 181105, 2012.
, "Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy", Applied Physics Letters, vol. 100, no. 5: AIP, pp. 052114, 2012.
, "Direct correlation between specific trap formation and electric stress-induced degradation in MBE-grown AlGaN/GaN HEMTs", Reliability Physics Symposium (IRPS), 2012 IEEE International: IEEE, pp. 2C–3, 2012.
, "Erratum:ìAsymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructuresî[Appl. Phys. Lett. 101, 091601 (2012)]", Applied Physics Letters, vol. 101, no. 22: AIP, pp. 229902, 2012.
, "GaN Laser Diodes on Nonpolar and Semipolar Planes", Semiconductors and Semimetals, vol. 86: Elsevier, pp. 149–182, 2012.
, "Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy", Journal of Applied Physics, vol. 112, no. 5: AIP, pp. 054903, 2012.
, "HAADF-STEM and TEM Investigation on the Structure of ${$-2110$}$ Prismatic Stacking Faults in a-plane GaN", Microscopy and Microanalysis, vol. 18, no. S2: Cambridge University Press, pp. 1342, 2012.
, "Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO 2 on sapphire", Physical Review B, vol. 86, no. 24: American Physical Society, pp. 245315, 2012.
, "Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy", Applied Physics Letters, vol. 101, no. 15: AIP, pp. 152104, 2012.
, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices", Semiconductor Science and Technology, vol. 27, no. 2: IOP Publishing, pp. 024001, 2012.
, "Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor", Applied Physics Letters, vol. 100, no. 19: AIP, pp. 193507, 2012.