| Title | Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy |
| Publication Type | Journal Article |
| Year of Publication | 2012 |
| Authors | Zhang, Z., CA. Hurni, AR. Arehart, JS. Speck, and SA. Ringel |
| Journal | Applied Physics Letters |
| Volume | 101 |
| Pagination | 152104 |