Publications
] , "Tunnel junctions in GaN/AlN for optoelectronic applications", Device Research Conference Digest, 2005. DRC'05. 63rd, vol. 1: IEEE, pp. 23–24, 2005.
, "Uniformity and control of surface morphology during growth of GaN by molecular beam epitaxy", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 4: AVS, pp. 1379–1385, 2005.
, "Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers", physica status solidi (a), vol. 203, no. 1: WILEY-VCH Verlag, pp. 142–148, 2006.
, "Cracking of III-nitride layers with strain gradients", Applied physics letters, vol. 89, no. 16: AIP, pp. 161922, 2006.
, "Defect reduction in nonpolar a-plane GaN films using in situ Si N x nanomask", Applied physics letters, vol. 89, no. 4: AIP, pp. 041903, 2006.
, "Dependence of local electronic structure in p-type GaN on crystal polarity and presence of inversion domain boundaries", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 24, no. 1: AVS, pp. 245–249, 2006.
, "Effect of threading dislocation density on Ni/ n-Ga N Schottky diode I-V characteristics", Journal of applied physics, vol. 100, no. 2: AIP, pp. 023709, 2006.
, "Exciton dynamics in nonpolar (11$$\backslash$bar 2 $0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", physica status solidi (c), vol. 3, no. 6: WILEY-VCH Verlag, pp. 2082–2086, 2006.
, "Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and", Info: Postprints, UC Santa Barbara, 2006.
, "Growth of Fe-doped GaN by RF plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 289, no. 2: Elsevier, pp. 587–595, 2006.
, "Growth of p-type and n-type m-plane GaN by molecular beam epitaxy", Journal of applied physics, vol. 100, no. 6: AIP, pp. 063707, 2006.
, "Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy", Applied physics letters, vol. 88, no. 8: AIP, pp. 082114, 2006.
, "Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation", Device Research Conference, 2006 64th: IEEE, pp. 101–102, 2006.
, "Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction", physica status solidi (b), vol. 243, no. 7: Wiley Online Library, pp. 1508–1513, 2006.
, "Microscopic emission properties of nonpolar α-plane GaN grown by HVPE", Gallium Nitride Materials and Devices, vol. 6121: International Society for Optics and Photonics, pp. 612106, 2006.
, "Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature", IEEE electron device letters, vol. 27, no. 4: IEEE, pp. 205–207, 2006.
, "Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation", Info: Postprints, UC Santa Barbara, 2006.
, "Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded In Ga N/ Ga N multi-quantum wells", Journal of Applied Physics, vol. 100, no. 5: AIP, pp. 054314, 2006.
, "Optical properties of nonpolar a-plane GaN layers", Superlattices and Microstructures, vol. 40, no. 4-6: Academic Press, pp. 253–261, 2006.
, "Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy", Applied physics letters, vol. 89, no. 7: AIP, pp. 071902, 2006.
, "P-gan/algan/gan enhancement-mode hemts", 64th Device Research Conference (DRC), pp. 163–164, 2006.
, "Prospective emission efficiency and in-plane light polarization of nonpolar m-plane In x Ga 1- x N/ Ga N blue light emitting diodes fabricated on freestanding GaN substrates", Applied physics letters, vol. 89, no. 9: AIP, pp. 091906, 2006.
, "Quantitative observation and discrimination of AlGaN-and GaN-related deep levels in Al Ga N/ Ga N heterostructures using capacitance deep level optical spectroscopy", Applied physics letters, vol. 89, no. 26: AIP, pp. 262116, 2006.
, "Realization of high hole concentrations in Mg doped semipolar (10 1\= 1\=) GaN", Applied physics letters, vol. 89, no. 20: AIP, pp. 202104, 2006.
, "Recombination dynamics of a 268 nm emission peak in Al 0.53 In 0.11 Ga 0.36 N/ Al 0.58 In 0.02 Ga 0.40 N multiple quantum wells", Applied Physics Letters, vol. 88, no. 11: AIP, pp. 111912, 2006.