Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

TitleNonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature
Publication TypeJournal Article
Year of Publication2006
AuthorsRecht, F., L. McCarthy, S. Rajan, A. Chakraborty, C. Poblenz, A. Corrion, JS. Speck, and UK. Mishra
JournalIEEE electron device letters
Volume27
Pagination205–207