Publications
Found 16 results
Author Title Type [ Year
] Filters: Author is Speck, JS and First Letter Of Title is A [Clear All Filters]
, "Absil, P., see Karmarkar, AP, TDMR Sept. 2016 402-412 Ahmed, S., see Kuhns, N., TDMR June 2016 105-111 Akbari, M., Virkki, J., Sydanheimo, L., and Ukkonen, L., Toward Graphene-Based Passive UHF RFID Textile Tags: A Reliability Study; TDMR Sept. 2016 429-4", IEEE Transactions on Device and Materials Reliability, vol. 16, no. 4, pp. 1, 2016.
, "Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs", IEEE Electron Device Letters, vol. 33, no. 5: IEEE, pp. 658–660, 2012.
, "Advances in GaN semiconductors for energy efficient solid state lighting", Photonics Conference (IPC), 2012 IEEE: IEEE, pp. 427–428, 2012.
, "Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 100, no. 8: AIP, pp. 082103, 2012.
, "Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures", Applied Physics Letters, vol. 101, no. 9: AIP, pp. 091601, 2012.
, "Atom probe analysis of interfacial abruptness and clustering within a single In x Ga 1- x N quantum well device on semipolar (10 1\= 1\=) GaN substrate", Applied physics letters, vol. 98, no. 19: AIP, pp. 191903, 2011.
, "AlGaN/GaN HEMTs with large angle implanted nonalloyed ohmic contacts", Device Research Conference, 2007 65th Annual: IEEE, pp. 37–38, 2007.
, "Analysis of interface electronic structure in In x Ga 1- x N/GaN heterostructures", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 4: AVS, pp. 2169–2174, 2004.
, "Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy", Applied physics letters, vol. 84, no. 4: AIP, pp. 535–537, 2004.
, "Antimony segregation in the oxidation of AlAsSb interlayers", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 21, no. 6: AVS, pp. 1883–1891, 2003.
, "Antimony segregation in the oxidation of strained AlAsSb interlayers", Molecular Beam Epitaxy, 2002 International Conference on: IEEE, pp. 181–182, 2002.
, "AlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy", Journal of Applied Physics, vol. 90, no. 10: AIP, pp. 5196–5201, 2001.
, "AlGaN-GaN HEMTs and HBTs for microwave power", Device Research Conference, 2000. Conference Digest. 58th DRC: IEEE, pp. 35–36, 2000.
, "Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 3: Cambridge University Press, 1998.
, "An approach to threading dislocation ëëreaction kineticsíí", Applied physics letters, vol. 69, no. 22: AIP, pp. 3342–3344, 1996.