Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD

TitleAtomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
Publication TypeJournal Article
Year of Publication1998
AuthorsMarchand, H., JP. Ibbetson, P. T. Fini, P. Kozodoy, S. Keller, S. DenBaars, JS. Speck, and UK. Mishra
JournalMaterials Research Society Internet Journal of Nitride Semiconductor Research
Volume3