Atom probe analysis of interfacial abruptness and clustering within a single In x Ga 1- x N quantum well device on semipolar (10 1\= 1\=) GaN substrate

TitleAtom probe analysis of interfacial abruptness and clustering within a single In x Ga 1- x N quantum well device on semipolar (10 1\= 1\=) GaN substrate
Publication TypeJournal Article
Year of Publication2011
AuthorsProsa, TJ., PH. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, SP. DenBaars, S. Nakamura, and JS. Speck
JournalApplied physics letters
Volume98
Pagination191903