Publications

Found 12 results
Author Title Type [ Year(Desc)]
Filters: Author is Corrion, A  [Clear All Filters]
2006
Corrion, A., F. Wu, T. Mates, CS. Gallinat, C. Poblenz, and JS. Speck, "Growth of Fe-doped GaN by RF plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 289, no. 2: Elsevier, pp. 587–595, 2006.
Shen, L., L. McCarthy, T. Palacios, MH. Wong, C. Poblenz, A. Corrion, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation", Device Research Conference, 2006 64th: IEEE, pp. 101–102, 2006.
Recht, F., L. McCarthy, S. Rajan, A. Chakraborty, C. Poblenz, A. Corrion, JS. Speck, and UK. Mishra, "Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature", IEEE electron device letters, vol. 27, no. 4: IEEE, pp. 205–207, 2006.
Recht, F., L. McCarthy, S. Rajan, A. Chakraborty, C. Poblenz, A. Corrion, JS. Speck, and UK. Mishra, "Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation", Info: Postprints, UC Santa Barbara, 2006.
Shen, L., T. Palacios, C. Poblenz, A. Corrion, A. Chakraborty, N. Fichtenbaum, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment", IEEE Electron Device Letters, vol. 27, no. 4: IEEE, pp. 214–216, 2006.
2007
Recht, F., L. McCarthy, L. Shen, C. Poblenz, A. Corrion, JS. Speck, and UK. Mishra, "AlGaN/GaN HEMTs with large angle implanted nonalloyed ohmic contacts", Device Research Conference, 2007 65th Annual: IEEE, pp. 37–38, 2007.
Pei, Y., C. Suh, R. Chu, F. Recht, L. Shen, A. Corrion, C. Poblenz, J. Speck, and UK. Mishra, "AlGaN/GaNHEMT with High PAE and Breakdown Voltage Grown by Ammonia MBE", Device Research Conference, 2007 65th Annual: IEEE, pp. 129–130, 2007.
Armstrong, A., A. Corrion, C. Poblenz, UK. Mishra, JS. Speck, and SA. Ringel, "Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy [phys. stat. sol.(b) 244, No. 6, 1867–1871 (2007)]", physica status solidi (b), vol. 244, no. 12: Wiley Online Library, pp. 4692–4692, 2007.
Shen, L., Y. Pei, L. McCarthy, C. Poblenz, A. Corrion, N. Fichtenbaum, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation", Microwave Symposium, 2007. IEEE/MTT-S International: IEEE, pp. 623–626, 2007.
2008
Armstrong, A., J. Caudill, A. Corrion, C. Poblenz, UK. Mishra, JS. Speck, and SA. Ringel, "Characterization of majority and minority carrier deep levels in p-type GaN: Mg grown by molecular beam epitaxy using deep level optical spectroscopy", Journal of Applied Physics, vol. 103, no. 6: AIP, pp. 063722, 2008.
Arehart, AR., A. Corrion, C. Poblenz, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 1750–1752, 2008.
Arehart, AR., A. Corrion, C. Poblenz, JS. Speck, UK. Mishra, and SA. Ringel, "Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy", Applied Physics Letters, vol. 93, no. 11: AIP, pp. 112101, 2008.