| Title | Characterization of majority and minority carrier deep levels in p-type GaN: Mg grown by molecular beam epitaxy using deep level optical spectroscopy |
| Publication Type | Journal Article |
| Year of Publication | 2008 |
| Authors | Armstrong, A., J. Caudill, A. Corrion, C. Poblenz, UK. Mishra, JS. Speck, and SA. Ringel |
| Journal | Journal of Applied Physics |
| Volume | 103 |
| Pagination | 063722 |