Publications

Found 12 results
Author Title Type [ Year(Desc)]
Filters: Author is Fini, Paul  [Clear All Filters]
1993
Golan, Y., P. Fini, S. P. DenBaars, and J. Speck, "???????: ????∑??∑????∑???????= Inorganic materials 4 (271), 633-641, 1997-11-01", J. Eur. Ceram. Soc, vol. 12, pp. 123, 1993.
1997
Golan, Y., P. Fini, S. P. DenBaars, and J. S. Speck, "Substrate Surface Treatments and Controlled Contamination in GaN/Sapphire MOCVD", MRS Online Proceedings Library Archive, vol. 482: Cambridge University Press, 1997.
1998
Golan, Y., P. Fini, S. P. DenBaars, and J. S. Speck, "Substrate Reactivity and ìControlled Contaminationî in Metalorganic Chemical Vapor Deposition of GaN on Sapphire", Japanese journal of applied physics, vol. 37, no. 9R: IOP Publishing, pp. 4695, 1998.
1999
Elsass, C. R., Y. Smorchkova, E. Haus, P. Fini, P. Petroff, S. P. DenBaars, U. Mishra, J. Speck, and B. Heying, "High electron mobility 2DEG in AlGaN/GaN structures", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1028–1029, 1999.
G Stephenson, B., J. A. Eastman, O. Auciello, A. Munkholm, C. Thompson, P. H. Fuoss, P. Fini, S. P. DenBaars, and J. S. Speck, "Real-time X-ray scattering studies of surface structure during metalorganic chemical vapor deposition of GaN", MRS Bulletin, vol. 24, no. 1: Cambridge University Press, pp. 21–25, 1999.
2000
Elsass, C. R., I. P. Smorchkova, B. Heying, E. Haus, C. Poblenz, P. Fini, K. Maranowski, P. M. Petroff, S. P. DenBaars, U. K. Mishra, et al., "Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 39, no. 10B: IOP Publishing, pp. L1023, 2000.
Hansen, M., P. Fini, L. Zhao, A. Abare, L. A. Coldren, J. S. Speck, and S. P. DenBaars, "Improved characteristics of InGaN multi-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 8–13, 2000.
Fini, P., L. Zhao, J. S. Speck, S. P. DenBaars, A. Munkholm, C. Thompson, GB. Stephenson, JA. Eastman, RMV. Murty, and O. Auciello, Measurement and minimization of wing tilt in laterally overgrown GaN on a SiO ${$sub 2$}$ mask.: Argonne National Lab., IL (US), 2000.
Heying, B., C. POBLENZ, C. ELSASS, P. Fini, S. DenBaars, J. Speck, Y. Smorchkova, and U. Mishra, "Optimization of the Electron Mobilites in GaN Grown by Plasma-assisted Molecular Beam Epitaxy", Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series, 2000.
Zhao, L., H. Marchand, P. Fini, SP. DenBaars, UK. Mishra, and JS. Speck, "Polarity determination for MOCVD growth of GaN on Si (111) by convergent beam electron diffraction", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 104–110, 2000.
2001
McCarthy, L. S., I. P. Smorchkova, H. Xing, P. Kozodoy, P. Fini, J. Limb, D. L. Pulfrey, J. S. Speck, M. J. W. Rodwell, SP. DenBaars, et al., "GaN HBT: toward an RF device", IEEE Transactions on Electron Devices, vol. 48, no. 3: IEEE, pp. 543–551, 2001.
Elsass, C. R., C. Poblenz, B. Heying, P. Fini, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck, A. Saxler, S. Elhamrib, et al., "Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 40, no. 11R: IOP Publishing, pp. 6235, 2001.