| Title | Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy |
| Publication Type | Journal Article |
| Year of Publication | 2001 |
| Authors | Elsass, C. R., C. Poblenz, B. Heying, P. Fini, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck, A. Saxler, S. Elhamrib, and others |
| Journal | Japanese Journal of Applied Physics |
| Volume | 40 |
| Pagination | 6235 |