| Title | High electron mobility 2DEG in AlGaN/GaN structures |
| Publication Type | Journal Article |
| Year of Publication | 1999 |
| Authors | Elsass, C. R., Y. Smorchkova, E. Haus, P. Fini, P. Petroff, S. P. DenBaars, U. Mishra, J. Speck, and B. Heying |
| Journal | Journal of Electronic Materials |
| Volume | 28 |
| Pagination | 1028–1029 |