Publications
Found 261 results
Author Title Type [ Year
Filters: First Letter Of Last Name is Y [Clear All Filters]
"Carrier Diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects", Applied Physics Letters, vol. 125, issue 3, 07/2024.
, "Dynamics of carrier injection through V-defects in long wavelength GaN LEDs", Applied Physics Letters, vol. 124, issue 18, 04/2024.
, "10.6% external quantum efficiency germicidal UV-LEDs grown on thin highly conductive n-AlGaN", Applied Physics Letters, vol. 123, issue 23, 2023.
, "Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs", Applied Physics Letters, vol. 123, issue 20, 2023.
, "High external quantum efficiency (6.8%) UV-A LEDs on AlN templates with quantum barrier optimization", Optics Express, vol. 31, issue 18, pp. 28649-28657, 2023.
, "Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodes", Opt. Express, vol. 31, pp. 7572–7578, Feb, 2023.
, "InGaN amber micrometer-scale light-emitting diodes with a peak external quantum efficiency of 5.5%", Applied Physics Express, 2023.
, "Significant Quantum Efficiency Enhancement of InGaN Red Micro-Light-Emitting Diodes with a Peak External Quantum Efficiency of up to 6%", ACS Photonics, pp. null, 2023.
, "Demonstration of ultra-small 5 × 5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2\%", Applied Physics Letters, vol. 120, 01, 2022.
, "Engineering of quantum barriers for efficient InGaN quantum well LEDs", Optica Advanced Photonics Congress 2022: Optica Publishing Group, 2022.
, "Polarization-Enhanced p-AlGaN Superlattice Optimization for GUV LED", IEEE Journal of Quantum Electronics, vol. 58, pp. 1-9, 2022.
, "Progress of InGaN-Based Red Micro-Light Emitting Diodes", Crystals, vol. 12, pp. 541, 2022.
, "Red InGaN micro-light-emitting diodes (\>620 nm) with a peak external quantum efficiency of 4.5\% using an epitaxial tunnel junction contact", Applied Physics Letters, vol. 120, 03, 2022.
, "Size dependent characteristics of AlGaN-based deep ultraviolet micro-light-emitting-diodes", Applied Physics Express, vol. 15, pp. 064003, may, 2022.
, "Surface reaction dependence of molecular beam epitaxy grown aluminum on various orientations of β-Ga2O3", APL Materials, vol. 10, 01, 2022.
, "High conductivity n-Al0.6Ga0.4N by ammonia-assisted molecular beam epitaxy for buried tunnel junctions in UV emitters", Opt. Express, vol. 29, pp. 40781–40794, Dec, 2021.
, "High conductivity n-Al0.6Ga0.4N by ammonia-assisted molecular beam epitaxy for buried tunnel junctions in UV emitters", Opt. Express, vol. 29, pp. 40781–40794, Dec, 2021.
, "High-temperature electroluminescence properties of InGaN red 40 × 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2\%", Applied Physics Letters, vol. 119, 12, 2021.
, "Thermal management strategies for gallium oxide vertical trench-fin MOSFETs", Journal of Applied Physics, vol. 129, pp. 085301, 2021.
, "Thermal Transport Across Al-(AlxGa1-x)2O3 and Al-Ga2O3 Interfaces", International Electronic Packaging Technical Conference and Exhibition, vol. ASME 2021 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, 10, 2021.
, "Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport", Phys. Rev. B, vol. 101, pp. 075305, Feb, 2020.
, "Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage", Semiconductor Science and Technology, vol. 35, pp. 125023, oct, 2020.
, "Modeling and analysis for thermal management in gallium oxide field-effect transistors", Journal of Applied Physics, vol. 127, pp. 154502, 2020.
, "Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination", Applied Physics Express, vol. 13, pp. 122005, nov, 2020.
, "Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition", Opt. Express, vol. 28, pp. 18707–18712, Jun, 2020.
,