Publications

Found 209 results
Author Title Type [ Year(Desc)]
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2009
Xu, G., Y. J. Ding, H. Zhao, G. Liu, M. Jamil, N. Tansu, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, et al., "THz generation from InN films due to destructive interference between optical rectification and photocurrent surge", Semiconductor Science and Technology, vol. 25, no. 1: IOP Publishing, pp. 015004, 2009.
Shen, H., M. Wraback, H. Zhong, A. Tyagi, SP. DenBaars, S. Nakamura, and JS. Speck, "Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well", Applied Physics Letters, vol. 95, no. 3: AIP, pp. 033503, 2009.
Reurings, F., F. Tuomisto, C. S. Gallinat, G. Koblmüller, and J. S. Speck, "Vacancy defects probed with positron annihilation spectroscopy in In-polar InN grown by plasma-assisted molecular beam epitaxy: Effects of growth conditions", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.
2010
Tyagi, A., R. M. Farrell, K. M. Kelchner, C.-Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, et al., "AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm", Applied Physics Express, vol. 3, pp. 011002, 2010.
Young, E. C., C. S. Gallinat, A. E. Romanov, A. Tyagi, F. Wu, and J. S. Speck, "Critical thickness for onset of plastic relaxation in (1122) and (2021) semipolar AlGaN heterostructures", Applied physics express, vol. 3, no. 11: IOP Publishing, pp. 111002, 2010.
Reurings, F., F. Tuomisto, C. S. Gallinat, G. Koblmüller, and J. S. Speck, "In vacancies in InN grown by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 97, no. 25: AIP, pp. 251907, 2010.
Koblmüller, G., F. Reurings, F. Tuomisto, and JS. Speck, "Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature", Applied Physics Letters, vol. 97, no. 19: AIP, pp. 191915, 2010.
Hsu, P. Shan, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, "InGaN/GaN blue laser diode grown on semipolar (3031) free-standing GaN substrates", Applied physics express, vol. 3, no. 5: IOP Publishing, pp. 052702, 2010.
Rauch, C., F. Reurings, F. Tuomisto, TD. Veal, C. F. McConville, H. Lu, WJ. Schaff, CS. Gallinat, G. Koblmüller, JS. Speck, et al., "In-vacancies in Si-doped InN", physica status solidi (a), vol. 207, no. 5: WILEY-VCH Verlag, pp. 1083–1086, 2010.
Young, E. C., F. Wu, A. E. Romanov, A. Tyagi, C. S. Gallinat, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Lattice tilt and misfit dislocations in (1122) semipolar GaN heteroepitaxy", Applied physics express, vol. 3, no. 1: IOP Publishing, pp. 011004, 2010.
Yang, CK., P. Roblin, F. De Groote, SA. Ringel, S. Rajan, JP. Teyssier, C. Poblenz, Y. Pei, J. Speck, and UK. Mishra, "Linear and Nonlinear Device Modeling-Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer", IEEE Transactions on Microwave Theory and Techniques, vol. 58, no. 5, pp. 1077, 2010.
Huang, C-Y., Y-. Da Lin, A. Tyagi, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Optical waveguide simulations for the optimization of InGaN-based green laser diodes", Journal of Applied Physics, vol. 107, no. 2: AIP, pp. 023101, 2010.
Shen, H., GA. Garrett, M. Wraback, H. Zhong, A. Tyagi, SP. DenBaars, S. Nakamura, and JS. Speck, "Polarization field crossover in semi-polar InGaN/GaN single quantum wells", physica status solidi (c), vol. 7, no. 10: Wiley Online Library, pp. 2378–2381, 2010.
Huang, C-Y., A. Tyagi, Y-. Da Lin, M. T. Hardy, P. Shan Hsu, K. Fujito, J-S. Ha, H. Ohta, J. S. Speck, S. P. DenBaars, et al., "Propagation of spontaneous emission in birefringent m-axis oriented semipolar (1122)(Al, In, Ga) N waveguide structures", Japanese Journal of Applied Physics, vol. 49, no. 1R: IOP Publishing, pp. 010207, 2010.
Yang, C. Kai, P. Roblin, F. De Groote, S. A. Ringel, S. Rajan, J. Pierre Teyssier, C. Poblenz, Y. Pei, J. Speck, and U. K. Mishra, "Pulsed-IV pulsed-RF cold-FET parasitic extraction of biased AlGaN/GaN HEMTs using large signal network analyzer", IEEE transactions on microwave theory and techniques, vol. 58, no. 5: IEEE, pp. 1077–1088, 2010.
Singisetti, U., M. Hoi Wong, S. Dasgupta, B. L. Swenson, B. J. Thibeault, J. S. Speck, U. K. Mishra, and others, "Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth", Device Research Conference (DRC), 2010: IEEE, pp. 191–192, 2010.
Nagata, T., O. Bierwagen, M. E. White, M-Y. Tsai, and J. S. Speck, "Study of the Au Schottky contact formation on oxygen plasma treated n-type SnO 2 (101) thin films", Journal of Applied Physics, vol. 107, no. 3: AIP, pp. 033707, 2010.
White, M. E., O. Bierwagen, M-Y. Tsai, and J. S. Speck, "Synthesis and characterization of highly resistive epitaxial indium-doped SnO2", Applied physics express, vol. 3, no. 5: IOP Publishing, pp. 051101, 2010.
Tsai, M-Y., O. Bierwagen, M. E. White, and J. S. Speck, "β-Ga 2 O 3 growth by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 28, no. 2: AVS, pp. 354–359, 2010.
2011
Prosa, TJ., PH. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, SP. DenBaars, S. Nakamura, and JS. Speck, "Atom probe analysis of interfacial abruptness and clustering within a single In x Ga 1- x N quantum well device on semipolar (10 1\= 1\=) GaN substrate", Applied physics letters, vol. 98, no. 19: AIP, pp. 191903, 2011.
Romanov, A. E., E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy", Journal of Applied Physics, vol. 109, no. 10: AIP, pp. 103522, 2011.
Hsu, P. Shan, J. Sonoda, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, E. C. Young, A. E. Romanov, K. Fujito, H. Ohta, et al., "Blue InGaN/GaN laser diodes grown on (33$$\backslash$bar 3$\backslash$bar 1$) free-standing GaN substrates", physica status solidi (c), vol. 8, no. 7-8: WILEY-VCH Verlag, pp. 2390–2392, 2011.
Simeonov, D., MY. Tsai, HT. Chen, C. Weisbuch, and J. Speck, "Bonding of nitride based LEDs on tin oxide templates for advanced optoelectronic devices", Electronics Letters, vol. 47, no. 9: IET, pp. 556–558, 2011.
Singisetti, U., M. Hoi Wong, S. Dasgupta, B. Swenson, B. J. Thibeault, J. S. Speck, U. K. Mishra, and others, "Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth", IEEE Electron Device Letters, vol. 32, no. 2: IEEE, pp. 137–139, 2011.
Zhao, Y., S. Tanaka, Q. Yan, C-Y. Huang, R. B. Chung, C-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, et al., "High optical polarization ratio from semipolar (20 2\= 1\=) blue-green InGaN/GaN light-emitting diodes", Applied physics letters, vol. 99, no. 5: AIP, pp. 051109, 2011.

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