| Title | Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature |
| Publication Type | Journal Article |
| Year of Publication | 2010 |
| Authors | Koblmüller, G., F. Reurings, F. Tuomisto, and JS. Speck |
| Journal | Applied Physics Letters |
| Volume | 97 |
| Pagination | 191915 |