Publications
Found 2098 results
Author Title Type [ Year
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, "Donors and deep acceptors in β-Ga2O3", Applied Physics Letters, vol. 113, pp. 062101, 2018.
, "Erratum:Nanometer scale composition study of MBE grown BGaN performed by atom probe tomography", Journal of Applied Physics, vol. 123, no. 1: AIP Publishing, pp. 019901, 2018.
, "Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy", Phys. Rev. B, vol. 98, pp. 045305, Jul, 2018.
, "Experimental evidence of nanometer-scale localized recombination due to random In fluctuations in InGaN/GaN quantum wells (Conference Presentation)", Physics and Simulation of Optoelectronic Devices XXVI, vol. 10526: International Society for Optics and Photonics, pp. 105261N, 2018.
, "An exploratory study of acidic ammonothermal growth in a TZM autoclave at high temperatures", Journal of Crystal Growth, vol. 499, pp. 85 - 89, 2018.
, "Growth kinetics of basic ammonothermal gallium nitride crystals", Journal of Crystal Growth, vol. 501, pp. 74 - 80, 2018.
, "Growth of N-polar GaN by ammonia molecular beam epitaxy", Journal of Crystal Growth, vol. 481: North-Holland, pp. 65–70, 2018.
, "High-temperature corrosion of Inconel®Alloy 718, Haynes®282®Alloy and CoWAlloy1&2 in supercritical ammonia/ammonium chloride solution", Journal of Crystal Growth, vol. 498, pp. 289 - 300, 2018.
, "High-temperature corrosion of Inconel®Alloy 718, Haynes®282®Alloy and CoWAlloy1&2 in supercritical ammonia/ammonium chloride solution", Journal of Crystal Growth, vol. 498, pp. 289 - 300, 2018.
, "High-temperature corrosion of Inconel®Alloy 718, Haynes®282®Alloy and CoWAlloy1&2 in supercritical ammonia/ammonium chloride solution", Journal of Crystal Growth, vol. 498, pp. 289 - 300, 2018.
, "Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes", Journal of Applied Physics, vol. 124, pp. 055703, 2018.
, "Impact of alloy composition and well width fluctuations on linewidth broadening and carrier lifetimes in semipolar InGaN quantum wells (Conference Presentation)", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105320P, 2018.
, "Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers", Journal of Crystal Growth, vol. 483: North-Holland, pp. 134–139, 2018.
, "Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers", Journal of Crystal Growth, vol. 483: North-Holland, pp. 134–139, 2018.
, "Metal-oxide catalyzed epitaxy (MOCATAXY): the example of the O plasma-assisted molecular beam epitaxy of β-(Al x Ga 1− x ) 2 O 3 /β-Ga 2 O 3 heterostructures", Applied Physics Express, vol. 11, pp. 115503, 2018.
, "Microstructural investigation of a melt spun nickel-base superalloy with boron additions.[Ni-11% Cr-5% Al-4% Ti with B additions of 0. 06, 0. 12, and 0. 6%]", TMS (The Metallurgical Society) Paper Selection;(USA), vol. 56, no. CONF-840909–, 2018.
, "Microstructural investigation of a melt spun nickel-base superalloy with boron additions.[Ni-11% Cr-5% Al-4% Ti with B additions of 0. 06, 0. 12, and 0. 6%]", TMS (The Metallurgical Society) Paper Selection;(USA), vol. 56, no. CONF-840909–, 2018.
, "Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs", IEEE Transactions on Device and Materials Reliability, vol. 18, pp. 364-376, Sept, 2018.
, "Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs", IEEE Transactions on Device and Materials Reliability, vol. 18, pp. 364-376, Sept, 2018.
, "Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs", IEEE Transactions on Device and Materials Reliability, vol. 18, pp. 364-376, Sept, 2018.
, "n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 33, no. 4: IOP Publishing, pp. 045001, 2018.
, "Progress in beta-gallium-oxide materials and devices (Conference Presentation)", Oxide-based Materials and Devices IX, vol. 10533: International Society for Optics and Photonics, pp. 1053307, 2018.
, "Prospects for 100% wall-plug efficient III-nitride LEDs", Opt. Express, vol. 26, pp. 16600–16608, Jun, 2018.
, "Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction", Applied Physics Express, vol. 11, no. 4: IOP Publishing, pp. 042101, 2018.
, "Semipolar GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations", Applied Physics Express, vol. 11, no. 3: IOP Publishing, pp. 036501, 2018.