Semipolar GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations

TitleSemipolar GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations
Publication TypeJournal Article
Year of Publication2018
AuthorsKhoury, M., H. Li, B. Bonef, L. Y. Kuritzky, A. J. Mughal, S. Nakamura, J. S. Speck, and S. P. DenBaars
JournalApplied Physics Express
Volume11
Pagination036501