Publications
Found 301 results
Author Title Type [ Year
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, "Characterization of traps in AlGaN/GaN HEMTs with a combined large signal network analyzer/deep level optical spectrometer system", Microwave Symposium Digest, 2009. MTT'09. IEEE MTT-S International: IEEE, pp. 1209–1212, 2009.
, "Characterization of traps in AlGaN/GaN HEMTs with a combined large signal network analyzer/deep level optical spectrometer system", Microwave Symposium Digest, 2009. MTT'09. IEEE MTT-S International: IEEE, pp. 1209–1212, 2009.
, "Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors", Applied Physics Express, vol. 2, no. 1: IOP Publishing, pp. 011001, 2009.
, "High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications", Applied Physics Letters, vol. 94, no. 21: AIP, pp. 213512, 2009.
, "Smooth top-down photoelectrochemical etching of m-plane GaN", Journal of The Electrochemical Society, vol. 156, no. 1: The Electrochemical Society, pp. H47–H51, 2009.
, "Vacancy defects probed with positron annihilation spectroscopy in In-polar InN grown by plasma-assisted molecular beam epitaxy: Effects of growth conditions", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.
, "AlGaN channel high electron mobility transistors: Device performance and power-switching figure of merit", Japanese Journal of Applied Physics, vol. 47, no. 5R: IOP Publishing, pp. 3359, 2008.
, "AlGaN channel high electron mobility transistors: Device performance and power-switching figure of merit", Japanese Journal of Applied Physics, vol. 47, no. 5R: IOP Publishing, pp. 3359, 2008.
, "Characterization of majority and minority carrier deep levels in p-type GaN: Mg grown by molecular beam epitaxy using deep level optical spectroscopy", Journal of Applied Physics, vol. 103, no. 6: AIP, pp. 063722, 2008.
, "Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 1750–1752, 2008.
, "Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy", Applied Physics Letters, vol. 93, no. 11: AIP, pp. 112101, 2008.
, "Electrical characterization of low defect density nonpolar (11\= 2 0) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)", Journal of Materials Research, vol. 23, no. 2: Cambridge University Press, pp. 551–555, 2008.
, "Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment", Applied physics express, vol. 1, no. 6: IOP Publishing, pp. 061101, 2008.
, "Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment", Applied physics express, vol. 1, no. 6: IOP Publishing, pp. 061101, 2008.
, "Improved quality nonpolar a-plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO)", physica status solidi (a), vol. 205, no. 7: WILEY-VCH Verlag, pp. 1705–1712, 2008.
, "Indium Nitride: A New Material for High Efficiency, Compact, 1550nm Laser-Based Terahertz Sources in Chemical and Biological Detection", International Journal of High Speed Electronics and Systems, vol. 18, no. 01: World Scientific, pp. 3–9, 2008.
, "Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures", Journal of Applied Physics, vol. 104, no. 9: AIP, pp. 093510, 2008.
, "Intensity-dependent photoluminescence studies of the electric field in N-face and In-face InN/InGaN multiple quantum wells", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 1846–1848, 2008.
, "N-face metal–insulator–semiconductor high-electron-mobility transistors with AlN back-barrier", IEEE Electron Device Letters, vol. 29, no. 10: IEEE, pp. 1101–1104, 2008.
, "Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier", Device Research Conference, 2008: IEEE, pp. 201–202, 2008.
, "Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 103, no. 3: AIP, pp. 033708, 2008.
, "Semiconductor, superconductor, spintronic, dielectric, and organic materials-Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment", Applied Physics Express, vol. 1, no. 6, pp. 61101, 2008.
, "Semiconductor, superconductor, spintronic, dielectric, and organic materials-Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment", Applied Physics Express, vol. 1, no. 6, pp. 61101, 2008.
, "Study of interface barrier of SiN x/GaN interface for nitrogen-polar GaN based high electron mobility transistors", Journal of Applied Physics, vol. 103, no. 12: AIP, pp. 124508, 2008.
, "Terahertz emission from nonpolar gallium nitride", Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on: IEEE, pp. 1–2, 2008.