Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

TitleProperties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition
Publication TypeJournal Article
Year of Publication2008
AuthorsKeller, S., CS. Suh, Z. Chen, R. Chu, S. Rajan, NA. Fichtenbaum, M. Furukawa, SP. DenBaars, JS. Speck, and UK. Mishra
JournalJournal of Applied Physics
Volume103
Pagination033708