Publications

Found 384 results
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2009
Wong, M. Hoi, Y. Pei, D. F. Brown, S. Keller, J. S. Speck, and U. K. Mishra, "High performance MBE-grown N-face microwave GaN HEMTs with> 70% PAE", Device Research Conference, 2009. DRC 2009: IEEE, pp. 157–158, 2009.
Wong, M. Hoi, Y. Pei, J. S. Speck, and U. K. Mishra, "High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation", Applied Physics Letters, vol. 94, no. 18: AIP, pp. 182103, 2009.
Navarro, A., C. Rivera, J. Pereiro, E. Munoz, B. Imer, SP. DenBaars, and JS. Speck, "High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications", Applied Physics Letters, vol. 94, no. 21: AIP, pp. 213512, 2009.
Wong, M. Hoi, Y. Pei, D. F. Brown, S. Keller, J. S. Speck, and U. K. Mishra, "High-performance N-face GaN microwave MIS-HEMTs with> 70% power-added efficiency", IEEE Electron Device Letters, vol. 30, no. 8: IEEE, pp. 802–804, 2009.
Pimputkar, S., J. S. Speck, S. P. DenBaars, and S. Nakamura, "Prospects for LED lighting", Nature photonics, vol. 3, no. 4: Nature Publishing Group, pp. 180, 2009.
2008
Gorczyca, I., L. Dmowski, J. Plesiewicz, T. Suski, N. Egede Christensen, A. Svane, CS. Gallinat, G. Koblmueller, and JS. Speck, "Band structure and effective mass of InN under pressure", physica status solidi (b), vol. 245, no. 5: Wiley Online Library, pp. 887–889, 2008.
Armstrong, A., J. Caudill, A. Corrion, C. Poblenz, UK. Mishra, JS. Speck, and SA. Ringel, "Characterization of majority and minority carrier deep levels in p-type GaN: Mg grown by molecular beam epitaxy using deep level optical spectroscopy", Journal of Applied Physics, vol. 103, no. 6: AIP, pp. 063722, 2008.
Arehart, AR., A. Corrion, C. Poblenz, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 1750–1752, 2008.
Arehart, AR., A. Corrion, C. Poblenz, JS. Speck, UK. Mishra, and SA. Ringel, "Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy", Applied Physics Letters, vol. 93, no. 11: AIP, pp. 112101, 2008.
Fehlberg, T. B., C. S. Gallinat, G. A. Umana-Membreno, G. Koblmüller, B. D. Nener, J. S. Speck, and G. Parish, "Effect of MBE growth conditions on multiple electron transport in InN", Journal of Electronic Materials, vol. 37, no. 5: Springer US, pp. 593–596, 2008.
Gorczyca, I., J. Plesiewicz, L. Dmowski, T. Suski, N. Egede Christensen, A. Svane, CS. Gallinat, G. Koblmueller, and JS. Speck, "Electronic structure and effective masses of InN under pressure", Journal of Applied Physics, vol. 104, no. 1: AIP, pp. 013704, 2008.
Chu, R., C. Poblenz, M. Hoi Wong, S. Dasgupta, S. Rajan, Y. Pei, F. Recht, L. Shen, J. S. Speck, and U. K. Mishra, "Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment", Applied physics express, vol. 1, no. 6: IOP Publishing, pp. 061101, 2008.
Chu, R., C. Poblenz, M. Hoi Wong, S. Dasgupta, S. Rajan, Y. Pei, F. Recht, L. Shen, J. S. Speck, and U. K. Mishra, "Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment", Applied physics express, vol. 1, no. 6: IOP Publishing, pp. 061101, 2008.
Lübbert, D., T. Baumbach, V. Hol\`y, P. Mikulík, L. Helfen, P. Pernot, M. Elyyan, S. Keller, TM. Katona, SP. DenBaars, et al., "Microdiffraction imaging of dislocation densities in microstructured samples", EPL (Europhysics Letters), vol. 82, no. 5: IOP Publishing, pp. 56002, 2008.
Fehlberg, T. B., G. Koblmüller, G. A. Umana-Membreno, C. S. Gallinat, B. D. Nener, J. S. Speck, and G. Parish, "Multiple carrier transport in N-face indium nitride", physica status solidi (b), vol. 245, no. 5: Wiley Online Library, pp. 907–909, 2008.
Wong, M. Hoi, Y. Pei, R. Chu, S. Rajan, B. L. Swenson, D. F. Brown, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "N-face metal–insulator–semiconductor high-electron-mobility transistors with AlN back-barrier", IEEE Electron Device Letters, vol. 29, no. 10: IEEE, pp. 1101–1104, 2008.
Yamanaka, T., D. Alexson, M. A. Stroscio, M. Dutta, P. Petroff, J. Brown, and J. Speck, "Phonon modes in self-assembled GaN quantum dots", Journal of Applied Physics, vol. 104, no. 9: AIP, pp. 093512, 2008.
Wong, M. Hoi, Y. Pei, R. Chu, S. Rajan, B. L. Swenson, D. F. Brown, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier", Device Research Conference, 2008: IEEE, pp. 201–202, 2008.
Chu, R., C. Poblenz, M. Hoi Wong, S. Dasgupta, S. Rajan, Y. Pei, F. Recht, L. Shen, J. S. Speck, and U. K. Mishra, "Semiconductor, superconductor, spintronic, dielectric, and organic materials-Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment", Applied Physics Express, vol. 1, no. 6, pp. 61101, 2008.
Chu, R., C. Poblenz, M. Hoi Wong, S. Dasgupta, S. Rajan, Y. Pei, F. Recht, L. Shen, J. S. Speck, and U. K. Mishra, "Semiconductor, superconductor, spintronic, dielectric, and organic materials-Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment", Applied Physics Express, vol. 1, no. 6, pp. 61101, 2008.
Corrion, AL., C. Poblenz, F. Wu, and JS. Speck, "Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors", Journal of Applied Physics, vol. 103, no. 9: AIP, pp. 093529, 2008.
Pei, Y., C. Poblenz, AL. Corrion, R. Chu, L. Shen, JS. Speck, and UK. Mishra, "X-and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE", Electronics Letters, vol. 44, no. 9: IET, pp. 598–598, 2008.
Pei, Y., C. Poblenz, AL. Corrion, R. Chu, L. Shen, JS. Speck, and UK. Mishra, "X-and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE", Electronics Letters, vol. 44, no. 9: IET, pp. 598–598, 2008.
2007
Recht, F., L. McCarthy, L. Shen, C. Poblenz, A. Corrion, JS. Speck, and UK. Mishra, "AlGaN/GaN HEMTs with large angle implanted nonalloyed ohmic contacts", Device Research Conference, 2007 65th Annual: IEEE, pp. 37–38, 2007.
Pei, Y., C. Suh, R. Chu, F. Recht, L. Shen, A. Corrion, C. Poblenz, J. Speck, and UK. Mishra, "AlGaN/GaNHEMT with High PAE and Breakdown Voltage Grown by Ammonia MBE", Device Research Conference, 2007 65th Annual: IEEE, pp. 129–130, 2007.

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