Publications

Found 374 results
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2024
Hendricks, N. S., A. E. Islam, E. A. Sowers, J. Williams, D. M. Dryden, K. J. Liddy, W. Wang, J. S. Speck, and A. J. Green, "Current transport mechanisms of metal/TiO2/Beta-Ga2O3 diodes", Journal of Applied Physics, vol. 135, issue 9, 2024.
Quevedo, A., F. Wu, T-Y. Tsai, J. J. Ewing, T. Tak, S. Gandrothula, S. Gee, X. Li, S. Nakamura, S. P. DenBaars, et al., "Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes", Applied Physics Letters, vol. 125, issue 4, 07/2024.
Wong, M. S., E. S. Trageser, H. Zhang, H-M. Chang, S. Gee, T. Tak, S. Gandrothula, C. Lee, J. S. Speck, S. Nakamura, et al., "III-nitride m-plane violet narrow ridge edge-emitting laser diodes with sidewall passivation using atomic layer deposition", Optics Express, vol. 32, issue 12, 06/2024.
Fornos, C., N. Alyabyeva, M. Sauty, W. Ying Ho, Y. Chao Chow, T. Tak, J. S. Speck, C. Weisbuch, Y. Lassailly, A. C. H. Rowe, et al., "Nanoscale mapping of inhomogeneities in the luminescence of operational nitride LEDs", Gallium Nitride Materials and Devices XIX, pp. PC1288608, 03/2024.
2023
Wang, M., F. Wu, Y. Yao, C. Zollner, M. Iza, M. Lam, S. P. DenBaars, S. Nakamura, and J. S. Speck, "10.6% external quantum efficiency germicidal UV-LEDs grown on thin highly conductive n-AlGaN", Applied Physics Letters, vol. 123, issue 23, 2023.
Ewing, J., C. Lynsky, F. Wu, M. Wong, M. Iza, J. S. Speck, and S. P. DenBaars, "6.5% external quantum efficiency in V-defect engineered red InGaN LEDs", Gallium Nitride Materials and Devices XVIII: International Society for Optics and Photonics, 2023.
Ho, W. Ying, Y. Chao Chow, Z. Biegler, K. Shek Qwah, T. Tak, A. Wissel-Garcia, I. Liu, F. Wu, S. Nakamura, and J. S. Speck, "Atomic layer etching (ALE) of III-nitrides", Applied Physics Letters, vol. 123, issue 6, 2023.
Ho, W. Ying, A. I. Alhassan, C. Lynsky, Y. Chao Chow, D. J. Myers, S. P. DenBaars, S. Nakamura, J. Peretti, C. Weisbuch, and J. S. Speck, "Detection of hot electrons originating from an upper valley at 1.7 eV above the Γ valley in wurtzite GaN using electron emission spectroscopy", Phys. Rev. B, vol. 107, pp. 035303, Jan, 2023.
Ewing, J. J., C. Lynsky, M. S. Wong, F. Wu, Y. Chao Chow, P. Shapturenka, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "High external quantum efficiency (6.5%) InGaN V-defect LEDs to 600 nm and patterned sapphire substrates", Optics Express, vol. 31, issue 25, pp. 41351-41360, 2023.
Yao, Y., H. Li, M. Wang, P. Li, M. Lam, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High external quantum efficiency (6.8%) UV-A LEDs on AlN templates with quantum barrier optimization", Optics Express, vol. 31, issue 18, pp. 28649-28657, 2023.
Yao, Y., H. Li, M. Wang, P. Li, M. Lam, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High external quantum efficiency (6.8%) UV-A LEDs on AlN templates with quantum barrier optimization", Optics Express, vol. 31, issue 18, pp. 28649-28657, 2023.
Yao, Y., H. Li, M. Wang, P. Li, M. Lam, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High external quantum efficiency (6.8%) UV-A LEDs on AlN templates with quantum barrier optimization", Optics Express, vol. 31, issue 18, pp. 28649-28657, 2023.
Li, P., H. Li, Y. Yao, K. Shek Qwah, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodes", Opt. Express, vol. 31, pp. 7572–7578, Feb, 2023.
Li, P., H. Li, Y. Yao, K. Shek Qwah, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodes", Opt. Express, vol. 31, pp. 7572–7578, Feb, 2023.
Li, P., H. Li, Y. Yang, M. S. Wong, M. Iza, M. J. Gordon, J. S. Speck, S. Nakamura, and S. P. DenBaars, "InGaN amber micrometer-scale light-emitting diodes with a peak external quantum efficiency of 5.5%", Applied Physics Express, 2023.
Li, P., H. Li, Y. Yang, M. S. Wong, M. Iza, M. J. Gordon, J. S. Speck, S. Nakamura, and S. P. DenBaars, "InGaN amber micrometer-scale light-emitting diodes with a peak external quantum efficiency of 5.5%", Applied Physics Express, 2023.
Chow, Y. C., C. Lynsky, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers", Journal of Applied Physics, vol. 133, 04, 2023.
Sauty, M., N. Alyabyeva, C. Lynsky, Y. Chao Chow, S. Nakamura, J. S. Speck, Y. Lassailly, A. C. H. Rowe, C. Weisbuch, and J. Peretti, "Probing Local Emission Properties in InGaN/GaN Quantum Wells by Scanning Tunneling Luminescence Microscopy", physica status solidi (b), vol. 260, pp. 2200365, 2023.
Sauty, M., N. Alyabyeva, C. Lynsky, Y. Chao Chow, S. Nakamura, J. S. Speck, Y. Lassailly, A. C. H. Rowe, C. Weisbuch, and J. Peretti, "Probing Local Emission Properties in InGaN/GaN Quantum Wells by Scanning Tunneling Luminescence Microscopy", physica status solidi (b), vol. 260, pp. 2200365, 2023.
Li, P., H. Li, Y. Yao, N. Lim, M. Wong, M. Iza, M. J. Gordon, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Significant Quantum Efficiency Enhancement of InGaN Red Micro-Light-Emitting Diodes with a Peak External Quantum Efficiency of up to 6%", ACS Photonics, pp. null, 2023.
Li, P., H. Li, Y. Yao, N. Lim, M. Wong, M. Iza, M. J. Gordon, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Significant Quantum Efficiency Enhancement of InGaN Red Micro-Light-Emitting Diodes with a Peak External Quantum Efficiency of up to 6%", ACS Photonics, pp. null, 2023.
Li, P., H. Li, Y. Yao, N. Lim, M. Wong, M. Iza, M. J. Gordon, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Significant Quantum Efficiency Enhancement of InGaN Red Micro-Light-Emitting Diodes with a Peak External Quantum Efficiency of up to 6%", ACS Photonics, pp. null, 2023.
Wu, F., J. Ewing, C. Lynsky, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Structure of V-defects in long wavelength GaN-based light emitting diodes", Journal of Applied Physics, vol. 133, 01, 2023.
Wu, F., J. Ewing, C. Lynsky, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Structure of V-defects in long wavelength GaN-based light emitting diodes", Journal of Applied Physics, vol. 133, 01/2023.
Hendricks, N. S., E. Farzana, A. E. Islam, K. D. Leedy, K. J. Liddy, J. Williams, D. M. Dryden, A. M. Adams, J. S. Speck, K. D. Chabak, et al., "Vertical metal-dielectric-semiconductor diode on (001) Beta-Ga2O3 with high-k TiO2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown", Applied Physics Express, vol. 16, issue 7, 2023.

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