Publications

Found 1602 results
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2011
Young, E. C., A. E. Romanov, and J. S. Speck, "Semiconductors, dielectrics, and organic materials-061001 Determination of Composition and Lattice Relaxation in Semipolar Ternary (In, Al, Ga) N Strained Layers from Symmetric X-ray Diffraction Measurements", Applied Physics Express, vol. 4, no. 6, 2011.
Chung, R. B., O. Bierwagen, F. Wu, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Semiconductors, dielectrics, and organic materials-101001 Temperature Dependent Capacitance-Voltage Analysis of Unintentionally Doped and Si Doped Al0. 82 In0. 18N Grown on GaN", Japanese Journal of Applied Physics, vol. 50, no. 10, 2011.
Chung, R., E. Young, D. Haeger, S. DenBaars, J. Speck, and D. Cohen, "Semipolar AlGaN Buffers for Deep Ultraviolet Diode Lasers", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Chung, R. B., E. C. Young, D. A. Haeger, S. P. DenBaars, J. S. Speck, and D. A. Cohen, "Semipolar AlN on bulk GaN for UV-C diode lasers", Quantum Electronics and Laser Science Conference: Optical Society of America, pp. JTuB2, 2011.
Tyagi, A., R. M. Farrell, C-Y. Huang, P. Shan Hsu, D. A. Haeger, K. M. Kelchner, H. Ohta, S. Nakamura, S. P. DenBaars, and J. S. Speck, Semipolar iii-nitride laser diodes with etched mirrors, 2011.
Drabold, D. A., A. L. Efros, E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, A. Hoffmann, A. A. Kaminskii, C-S. Lee, et al., Stefan Hildebrandt Ingeborg Stass: Wiley Online Library, 2011.
Koslow, I., M. Hardy, P-S. Hsu, E. Young, S. Nakamura, J. Speck, and S. DenBaars, "Strain Relaxation in Semipolar Nitrides for Optoelectronic Device Applications", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Farrell, R. M., D. A. Haeger, P. Shan Hsu, U. K. Mishra, S. P. DenBaars, J. S. Speck, and S. Nakamura, STRUCTURE AND METHOD FOR ACHIEVING SELECTIVE ETCHING IN (Ga, Al, In, B) N LASER DIODES, 2011.
Farrell, R. M., M. T. Hardy, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, Structure for Improving the Mirror Facet Cleaving Yield of (Ga, Al, In, B) N Laser Diodes Grown on Nonpolar or Semipolar (Ga, Al, In, B) N Substrates, 2011.
Hardy, M. T., Y-. Da Lin, H. Ohta, S. P. DenBaars, J. S. Speck, S. Nakamura, and K. M. Kelchner, Superluminescent diodes by crystallographic etching, 2011.
Chung, R. B., O. Bierwagen, F. Wu, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0. 82In0. 18N Grown on GaN", Japanese Journal of Applied Physics, vol. 50, no. 10R: IOP Publishing, pp. 101001, 2011.
Roy, T., EX. Zhang, YS. Puzyrev, X. Shen, DM. Fleetwood, RD. Schrimpf, G. Koblmueller, R. Chu, C. Poblenz, N. Fichtenbaum, et al., "Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors", Applied Physics Letters, vol. 99, no. 20: AIP, pp. 203501, 2011.
Dasgupta, S., J. Lu, F. Wu, S. Keller, JS. Speck, UK. Mishra, and others, "Trap-related delay analysis of self-aligned N-polar GaN/InAlN HEMTs with record extrinsic g m of 1105 mS/mm", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 279–280, 2011.
Singisett, U., M. Hoi Wong, J. S. Speck, and U. K. Mishra, "Vertically scaled 5 nm GaN channel enhancement-mode N-polar GaN MOS-HFET with 560 mS/mm g m and 0.76 Ω-mm R on", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 1–2, 2011.
Toledo, N., C. Neufeld, M. Scarpulla, T. Buehl, S. Cruz, A. Gossard, S. DenBaars, J. Speck, and U. Mishra, "Wafer Bonded GaAs-Sapphire for Photovoltaic Applications via Adhesive Bonding", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Wong, MH., DF. Brown, ML. Schuette, H. Kim, V. Balasubramanian, W. Lu, JS. Speck, and UK. Mishra, "X-band power performance of N-face GaN MIS-HEMTs", Electronics Letters, vol. 47, no. 3: IET Digital Library, pp. 214–215, 2011.
Nagata, T., O. Bierwagen, ME. White, MY. Tsai, Y. Yamashita, H. Yoshikawa, N. Ohashi, K. Kobayashi, T. Chikyow, and JS. Speck, "XPS study of Sb-/In-doping and surface pinning effects on the Fermi level in SnO 2 (101) thin films", Applied Physics Letters, vol. 98, no. 23: AIP, pp. 232107, 2011.
2010
Tyagi, A., R. M. Farrell, K. M. Kelchner, C.-Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, et al., "AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm", Applied Physics Express, vol. 3, pp. 011002, 2010.
Young, E. C., A. E. Romanov, C. S. Gallinat, A. Hirai, G. E. Beltz, and J. S. Speck, "Anisotropy of tensile stresses and cracking in nonbasal plane Al x Ga 1- x N/GaN heterostructures", Applied Physics Letters, vol. 96, no. 4: AIP, pp. 041913, 2010.
Kelchner, K. M., R. M. Farrell, Y-. Da Lin, P. Shan Hsu, M. T. Hardy, F. Wu, D. A. Cohen, H. Ohta, J. S. Speck, S. Nakamura, et al., "Continuous-wave operation of pure blue AlGaN-cladding-free nonpolar InGaN/GaN laser diodes", Applied Physics Express, vol. 3, no. 9: IOP Publishing, pp. 092103, 2010.
Young, E. C., C. S. Gallinat, A. E. Romanov, A. Tyagi, F. Wu, and J. S. Speck, "Critical thickness for onset of plastic relaxation in (1122) and (2021) semipolar AlGaN heterostructures", Applied physics express, vol. 3, no. 11: IOP Publishing, pp. 111002, 2010.
Farrell, RM., DA. Haeger, X. Chen, M. Iza, A. Hirai, KM. Kelchner, K. Fujito, A. Chakraborty, S. Keller, SP. DenBaars, et al., "Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes", Journal of Crystal Growth, vol. 313, no. 1: Elsevier, pp. 1–7, 2010.
Arehart, AR., C. Poblenz, JS. Speck, and SA. Ringel, "Effect of nitrogen plasma power on defect levels in Ni/n-GaN Schottky diodes grown by molecular beam epitaxy", Journal of Applied Physics, vol. 107, no. 5: AIP, pp. 054518, 2010.
Speck, J. S., B. A. Haskell, M. P Pattison, and T. J. Baker, Etching technique for the fabrication of thin (Al, In, Ga) N layers, 2010.
Gallinat, CS., G. Koblmüller, F. Wu, and JS. Speck, "Evaluation of threading dislocation densities in In-and N-face InN", Journal of Applied Physics, vol. 107, no. 5: AIP, pp. 053517, 2010.

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