Publications

Found 647 results
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2014
Hardy, M. T., F. Wu, C-Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes", IEEE Photonics Technology Letters, vol. 26, no. 1: IEEE, pp. 43–46, 2014.
Hardy, M. T., F. Wu, C. Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes", IEEE Photonics Technology Letters, vol. 26, pp. 43-46, Jan, 2014.
Koslow, I. L., C. McTaggart, F. Wu, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Improved performance of long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1- xN buffer layers", Applied Physics Express, vol. 7, no. 3: IOP Publishing, pp. 031003, 2014.
Yang, T-J., J. S. Speck, and Y-R. Wu, "Influence of nanoscale indium fluctuation in the InGaN quantum-well LED to the efficiency droop with a fully 3D simulation model", Gallium Nitride Materials and Devices IX, vol. 8986: International Society for Optics and Photonics, pp. 89861I, 2014.
Yang, T-J., R. Shivaraman, J. S. Speck, and Y-R. Wu, "The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior", Journal of Applied Physics, vol. 116, no. 11: AIP Publishing, pp. 113104, 2014.
Watanabe, K., T. Ohsawa, I. Sakaguchi, O. Bierwagen, M. E. White, M-Y. Tsai, R. Takahashi, E. M. Ross, Y. Adachi, J. S. Speck, et al., "Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions", Applied Physics Letters, vol. 104, no. 13: AIP, pp. 132110, 2014.
Watanabe, K., T. Ohsawa, I. Sakaguchi, O. Bierwagen, M. E. White, M-Y. Tsai, R. Takahashi, E. M. Ross, Y. Adachi, J. S. Speck, et al., "Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions", Applied Physics Letters, vol. 104, no. 13: AIP, pp. 132110, 2014.
Liu, X., SH. Chan, F. Wu, Y. Li, S. Keller, JS. Speck, and UK. Mishra, "Metalorganic chemical vapor deposition of Al 2 O 3 using trimethylaluminum and O 2 precursors: Growth mechanism and crystallinity", Journal of Crystal Growth, vol. 408: Elsevier, pp. 78–84, 2014.
Wu, Y-R., C-Y. Huang, Y. Zhao, and JS. Speck, "Nonpolar and semipolar LEDs", Nitride Semiconductor Light-Emitting Diodes (LEDs), pp. 250–275, 2014.
Koslow, I. L., M. T. Hardy, P. Shan Hsu, F. Wu, A. E. Romanov, E. C. Young, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Onset of plastic relaxation in semipolar (112\= 2) InxGa1- xN/GaN heterostructures", Journal of Crystal Growth, vol. 388: North-Holland, pp. 48–53, 2014.
Feneberg, M., C. Lidig, K. Lange, R. Goldhahn, M. D. Neumann, N. Esser, O. Bierwagen, M. E. White, M. Y. Tsai, and J. S. Speck, "Ordinary and extraordinary dielectric functions of rutile SnO2 up to 20 eV", Applied Physics Letters, vol. 104, no. 23: AIP, pp. 231106, 2014.
Iveland, J., M. Piccardo, L. Martinelli, J. Peretti, J. Won Choi, N. Young, S. Nakamura, J. S. Speck, and C. Weisbuch, "Origin of electrons emitted into vacuum from InGaN light emitting diodes", Applied Physics Letters, vol. 105, no. 5: AIP Publishing, pp. 052103, 2014.
McSkimming, B. M., F. Wu, T. Huault, C. Chaix, and J. S. Speck, "Plasma assisted molecular beam epitaxy of GaN with growth rates> 2.6 μm/h", Journal of Crystal Growth, vol. 386: Elsevier, pp. 168–174, 2014.
Wu, F., Y. Zhao, A. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Stacking faults and interface roughening in semipolar (20 2\= 1\=) single InGaN quantum wells for long wavelength emission", Applied Physics Letters, vol. 104, no. 15: AIP, pp. 151901, 2014.
Korhonen, E., F. Tuomisto, O. Bierwagen, JS. Speck, ME. White, and Z. Galazka, "Vacancy complexes in Sb-doped SnO 2", AIP Conference Proceedings, vol. 1583, no. 1: AIP, pp. 368–371, 2014.
Zhao, Y., R. M. Farrell, Y-R. Wu, and J. S. Speck, "Valence band states and polarized optical emission from nonpolar and semipolar III–nitride quantum well optoelectronic devices", Japanese Journal of Applied Physics, vol. 53, no. 10: IOP Publishing, pp. 100206, 2014.
Farahani, SK. Vasheghani, TD. Veal, JJ. Mudd, DO. Scanlon, GW. Watson, O. Bierwagen, ME. White, JS. Speck, and CF. McConville, "Valence-band density of states and surface electron accumulation in epitaxial SnO 2 films", Physical Review B, vol. 90, no. 15: American Physical Society, pp. 155413, 2014.
Farahani, SK. Vasheghani, TD. Veal, JJ. Mudd, DO. Scanlon, GW. Watson, O. Bierwagen, ME. White, JS. Speck, and CF. McConville, "Valence-band density of states and surface electron accumulation in epitaxial SnO 2 films", Physical Review B, vol. 90, no. 15: American Physical Society, pp. 155413, 2014.
2013
Shivaraman, R., Y-R. Wu, S. Choi, R. Chung, and J. Speck, "Atom Probe Tomography of III-Nitrides Based Semiconducting Devices", Microscopy and Microanalysis, vol. 19, no. S2: Cambridge University Press, pp. 956–957, 2013.
Bryant, B. N., E. C. Young, F. Wu, K. Fujito, S. Nakamura, and J. S. Speck, "Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas in m-plane GaN Regrowth by Hydride Vapor Phase Epitaxy", Applied Physics Express, vol. 6, no. 11: IOP Publishing, pp. 115502, 2013.
Hsu, P. Shan, F. Wu, E. C. Young, A. E. Romanov, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Blue and aquamarine stress-relaxed semipolar (11 2\= 2) laser diodes", Applied Physics Letters, vol. 103, no. 16: AIP, pp. 161117, 2013.
Hsu, P. Shan, R. M. Farrell, J. J. Weaver, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Comparison of Polished and Dry Etched Semipolar $(11$\backslash$bar ${$2$}$ 2) $ III-Nitride Laser Facets", IEEE Photonics Technology Letters, vol. 25, no. 21: IEEE, pp. 2105–2107, 2013.
Farell, R. M., E. C. Young, F. Wu, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Development of high-performance nonpolar III-nitride light-emitting devices", Electronics, Communications and Photonics Conference (SIECPC), 2013 Saudi International: IEEE, pp. 1–8, 2013.
Iveland, J., L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, "Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop", Physical review letters, vol. 110, no. 17: American Physical Society, pp. 177406, 2013.
Zhao, Y., S. Ho Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Green semipolar (2021) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth", Applied Physics Express, vol. 6, no. 6: IOP Publishing, pp. 062102, 2013.

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