| Title | Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes |
| Publication Type | Journal Article |
| Year of Publication | 2014 |
| Authors | Hardy, M. T., F. Wu, C. Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars |
| Journal | IEEE Photonics Technology Letters |
| Volume | 26 |
| Pagination | 43-46 |
| Date Published | Jan |
| ISSN | 1041-1135 |
| Keywords | Aluminum gallium nitride, annealing, barrier composition, catastrophic damage, dark triangle defects, Diode lasers, DTD size, epitaxial defects, gallium compounds, Gallium nitride, GaN, green laser diodes, III-V semiconductors, laser beams, lasing wavelength, nonradiative defects, optical confinement factor, Photonics, post-QW-growth annealing, quantum well lasers, semipolar GaN, semipolar green laser diodes, semipolar oriented green quantum wells, Temperature measurement, thermal damage, thermal stability, threshold current density, wavelength 511 nm, wide band gap semiconductors |
| DOI | 10.1109/LPT.2013.2288927 |
