Publications

Found 647 results
Author Title Type [ Year(Asc)]
Filters: First Letter Of Last Name is W  [Clear All Filters]
2004
Kaeding, J. F., Y. Wu, T. Fujii, R. Sharma, P. T. Fini, J. S. Speck, and S. Nakamura, "Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes", Journal of crystal growth, vol. 272, no. 1-4: North-Holland, pp. 257–263, 2004.
Katona, TM., P. Cantu, S. Keller, Y. Wu, JS. Speck, and SP. DenBaars, "Maskless lateral epitaxial overgrowth of high-aluminum-content Al x Ga 1- x N", Applied physics letters, vol. 84, no. 24: AIP, pp. 5025–5027, 2004.
Craven, MD., F. Wu, A. Chakraborty, B. Imer, UK. Mishra, SP. DenBaars, and JS. Speck, "Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition", Applied physics letters, vol. 84, no. 8: AIP, pp. 1281–1283, 2004.
Rajan, S., P. Waltereit, C. Poblenz, S. J. Heikman, D. S. Green, J. S. Speck, and U. K. Mishra, "Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE", IEEE Electron Device Letters, vol. 25, no. 5: IEEE, pp. 247–249, 2004.
Moran, B., F. Wu, AE. Romanov, UK. Mishra, SP. DenBaars, and JS. Speck, "Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer", Journal of Crystal Growth, vol. 273, no. 1-2: North-Holland, pp. 38–47, 2004.
Waltereit, P., C. Poblenz, S. Rajan, F. Wu, U. K. Mishra, and J. S. Speck, "Structural properties of GaN buffer layers on 4H-SiC (0001) grown by plasma-assisted molecular beam epitaxy for high electron mobility transistors", Japanese journal of applied physics, vol. 43, no. 12A: IOP Publishing, pp. L1520, 2004.
Waltereit, P., C. Poblenz, S. Rajan, F. Wu, U. K. Mishra, and J. S. Speck, "Structural properties of GaN buffer layers on 4H-SiC (0001) grown by plasma-assisted molecular beam epitaxy for high electron mobility transistors", Japanese journal of applied physics, vol. 43, no. 12A: IOP Publishing, pp. L1520, 2004.
Craven, MD., P. Waltereit, JS. Speck, and SP. DenBaars, "Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells", Applied physics letters, vol. 84, no. 4: AIP, pp. 496–498, 2004.
2003
Sato, H., P. Waltereit, D. S. Green, C. Poblenz, T. Katona, S. P. DenBaars, J. S. Speck, H. Tamura, and C. Funaoka, "Blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy", physica status solidi (c), no. 7: Wiley Online Library, pp. 2193–2197, 2003.
Craven, M. D., P. Waltereit, F. Wu, J. S. Speck, and S. P. DenBaars, "Characterization of a-plane GaN/(Al, Ga) N multiple quantum wells grown via metalorganic chemical vapor deposition", Japanese journal of applied physics, vol. 42, no. 3A: IOP Publishing, pp. L235, 2003.
Craven, M. D., P. Waltereit, F. Wu, J. S. Speck, and S. P. DenBaars, "Characterization of a-plane GaN/(Al, Ga) N multiple quantum wells grown via metalorganic chemical vapor deposition", Japanese journal of applied physics, vol. 42, no. 3A: IOP Publishing, pp. L235, 2003.
Simpkins, BS., ET. Yu, P. Waltereit, and JS. Speck, "Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride", Journal of applied physics, vol. 94, no. 3: AIP, pp. 1448–1453, 2003.
Haskell, BA., F. Wu, MD. Craven, S. Matsuda, PT. Fini, T. Fujii, K. Fujito, SP. DenBaars, JS. Speck, and S. Nakamura, "Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy", Applied physics letters, vol. 83, no. 4: AIP, pp. 644–646, 2003.
Wu, Y., JP. Zhang, GS. Cheng, M. Moskovits, and JS. Speck, "Defect Structure of Mg-Doped GaN Nanowires", Microscopy and Microanalysis, vol. 9, no. S02: Cambridge University Press, pp. 344–345, 2003.
Zhang, JP., Y. Wu, GS. Cheng, M. Moskovits, and JS. Speck, "Dislocation-free GaN nanowires", Microscopy and Microanalysis, vol. 9, no. S02: Cambridge University Press, pp. 342–343, 2003.
Keller, S., P. Waltereit, P. Cantu, UK. Mishra, JS. Speck, and SP. DenBaars, "Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition", Optical Materials, vol. 23, no. 1-2: North-Holland, pp. 187–195, 2003.
Shen, L., S. Heikman, Y. Wu, D. Buttari, R. Coffie, A. Chini, L. McCarthy, S. Keller, J. Speck, and U. Mishra, "GaN/AlGaN/GaN heterostructure and its application to the dispersion removal in HEMTs", Abstracts of 2003 MRS Spring Meeting, pp. 81, 2003.
Golan, Y., P. Fini, D. Dahan, F. Wu, S. Zamir, J. Salzman, and JS. Speck, "High-quality GaN on intentionally roughened c-sapphire", The European Physical Journal Applied Physics, vol. 22, no. 1: EDP Sciences, pp. 11–14, 2003.
Hudait, MK., Y. Lin, DM. Wilt, JS. Speck, CA. Tivarus, ER. Heller, JP. Pelz, and SA. Ringel, "High-quality InAs y P 1- y step-graded buffer by molecular-beam epitaxy", Applied physics letters, vol. 82, no. 19: AIP, pp. 3212–3214, 2003.
Brandt, O., Y. Jun Sun, H-P. Schönherr, K. H. Ploog, P. Waltereit, S-H. Lim, and J. S. Speck, "Improved synthesis of (In, Ga) N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy", Applied physics letters, vol. 83, no. 1: AIP, pp. 90–92, 2003.
Brandt, O., Y. Jun Sun, H-P. Schönherr, K. H. Ploog, P. Waltereit, S-H. Lim, and J. S. Speck, "Improved synthesis of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 83, pp. 90-92, 2003.
Sun, Y. Jun, O. Brandt, S. Cronenberg, S. Dhar, H. T. Grahn, K. H. Ploog, P. Waltereit, and J. S. Speck, "Nonpolar In x Ga 1- x N/GaN (11\= 0 0) multiple quantum wells grown on γ- LiAlO 2 (100) by plasma-assisted molecular-beam epitaxy", Physical Review B, vol. 67, no. 4: APS, pp. 041306, 2003.
Miller, EJ., DM. Schaadt, ET. Yu, XL. Sun, LJ. Brillson, P. Waltereit, and JS. Speck, "Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy", Journal of applied physics, vol. 94, no. 12: AIP, pp. 7611–7615, 2003.
Winzer, A. T., R. Goldhahn, C. Buchheim, O. Ambacher, A. Link, M. Stutzmann, Y. Smorchkova, UK. Mishra, and JS. Speck, "Photoreflectance studiesof N-and Ga-face AlGaN/GaN heterostructures confininga polarisation induced 2DEG", physica status solidi (b), vol. 240, no. 2: Wiley Online Library, pp. 380–383, 2003.
Green, DS., E. Haus, F. Wu, L. Chen, UK. Mishra, and JS. Speck, "Polarity control during molecular beam epitaxy growth of Mg-doped GaN", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 21, no. 4: AVS, pp. 1804–1811, 2003.

Pages