Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy

TitleOrigin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy
Publication TypeJournal Article
Year of Publication2003
AuthorsMiller, EJ., DM. Schaadt, ET. Yu, XL. Sun, LJ. Brillson, P. Waltereit, and JS. Speck
JournalJournal of applied physics
Volume94
Pagination7611–7615