Publications

Found 2112 results
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2008
Gorczyca, I., L. Dmowski, J. Plesiewicz, T. Suski, N. Egede Christensen, A. Svane, CS. Gallinat, G. Koblmueller, and JS. Speck, "Band structure and effective mass of InN under pressure", physica status solidi (b), vol. 245, no. 5: Wiley Online Library, pp. 887–889, 2008.
McLaurin, M. B., A. Hirai, E. Young, F. Wu, and J. S. Speck, "Basal plane stacking-fault related anisotropy in X-ray rocking curve widths of m-plane GaN", Japanese Journal of Applied Physics, vol. 47, no. 7R: IOP Publishing, pp. 5429, 2008.
Sato, H., H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "The Blue Laser Diode'The Blue Laser Diode', 1997", Journal of light and visual environment, vol. 32, no. 2, pp. 107–110, 2008.
Sato, H., H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "The Blue Laser Diode'The Blue Laser Diode', 1997", Journal of light and visual environment, vol. 32, no. 2, pp. 107–110, 2008.
Sato, H., H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "The Blue Laser Diode'The Blue Laser Diode', 1997", Journal of light and visual environment, vol. 32, no. 2, pp. 107–110, 2008.
Bierwagen, O., T. Ive, C. G. Van de Walle, and J. S. Speck, "Causes of incorrect carrier-type identification in van der Pauw–Hall measurements", Applied Physics Letters, vol. 93, no. 24: AIP, pp. 242108, 2008.
Armstrong, A., J. Caudill, A. Corrion, C. Poblenz, UK. Mishra, JS. Speck, and SA. Ringel, "Characterization of majority and minority carrier deep levels in p-type GaN: Mg grown by molecular beam epitaxy using deep level optical spectroscopy", Journal of Applied Physics, vol. 103, no. 6: AIP, pp. 063722, 2008.
Law, JJM., ET. Yu, BA. Haskell, PT. Fini, S. Nakamura, JS. Speck, and SP. DenBaars, "Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy", Journal of Applied Physics, vol. 103, no. 1: AIP, pp. 014305, 2008.
Arehart, AR., A. Corrion, C. Poblenz, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 1750–1752, 2008.
Yamada, H., K. Iso, M. Saito, H. Hirasawa, N. Fellows, H. Masui, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Comparison of InGaN/GaN light emitting diodes grown on m-plane and a-plane bulk GaN substrates", physica status solidi (RRL)-Rapid Research Letters, vol. 2, no. 2: Wiley Online Library, pp. 89–91, 2008.
Yamada, H., K. Iso, M. Saito, H. Hirasawa, N. Fellows, H. Masui, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Comparison of InGaN/GaN light emitting diodes grown on m-plane and a-plane bulk GaN substrates", physica status solidi (RRL)-Rapid Research Letters, vol. 2, no. 2: Wiley Online Library, pp. 89–91, 2008.
Kim, K. Choong, M. C. Schmidt, F. Wu, A. Hirai, M. B. McLaurin, S. P. DenBaars, S. Nakamura, and J. S. Speck, CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B) N ON VARIOUS SUBSTRATES, 2008.
Kim, K. Choong, M. C. Schmidt, F. Wu, A. Hirai, M. B. McLaurin, S. P. DenBaars, S. Nakamura, and J. S. Speck, CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B) N ON VARIOUS SUBSTRATES, 2008.
Arehart, AR., A. Corrion, C. Poblenz, JS. Speck, UK. Mishra, and SA. Ringel, "Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy", Applied Physics Letters, vol. 93, no. 11: AIP, pp. 112101, 2008.
Imer, B. M., J. S. Speck, and S. P. DenBaars, Defect reduction of non-polar and semi-polar III-Nitrides with sidewall lateral epitaxial overgrowth (SLEO), 2008.
Asamizu, H., M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Demonstration of 426 nm InGaN/GaN laser diodes fabricated on free-standing semipolar (1122) gallium nitride substrates", Applied physics express, vol. 1, no. 9: IOP Publishing, pp. 091102, 2008.
Asamizu, H., M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Demonstration of 426 nm InGaN/GaN laser diodes fabricated on free-standing semipolar (1122) gallium nitride substrates", Applied physics express, vol. 1, no. 9: IOP Publishing, pp. 091102, 2008.
Speck, J. S., Development of Advanced Ill-Nitride Materials: DTIC Document, 2008.
Speck, J. S., Development of III-Nitride Materials for IR Applications: DTIC Document, 2008.
Hol\`y, V., T. Baumbach, D. Lübbert, L. Helfen, M. Ellyan, P. Mikulík, S. Keller, SP. DenBaars, and J. Speck, "Diffuse x-ray scattering from statistically inhomogeneous distributions of threading dislocations beyond the ergodic hypothesis", Physical Review B, vol. 77, no. 9: American Physical Society, pp. 094102, 2008.
McGroddy, K., A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, JS. Speck, C. Weisbuch, and EL. Hu, "Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes", Applied physics letters, vol. 93, no. 10: AIP, pp. 103502, 2008.
Koblmüller, G., R. Chu, F. Wu, U. K. Mishra, and J. S. Speck, "Dislocation reduction in AlGaN/GaN heterostructures on 4H-SiC by molecular beam epitaxy in the thermal decomposition regime", Applied physics express, vol. 1, no. 6: IOP Publishing, pp. 061103, 2008.
Fehlberg, T. B., C. S. Gallinat, G. A. Umana-Membreno, G. Koblmüller, B. D. Nener, J. S. Speck, and G. Parish, "Effect of MBE growth conditions on multiple electron transport in InN", Journal of Electronic Materials, vol. 37, no. 5: Springer US, pp. 593–596, 2008.
Imer, B., B. Haskell, S. Rajan, S. Keller, U. K. Mishra, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Electrical characterization of low defect density nonpolar (11\= 2 0) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)", Journal of Materials Research, vol. 23, no. 2: Cambridge University Press, pp. 551–555, 2008.
Gorczyca, I., J. Plesiewicz, L. Dmowski, T. Suski, N. Egede Christensen, A. Svane, CS. Gallinat, G. Koblmueller, and JS. Speck, "Electronic structure and effective masses of InN under pressure", Journal of Applied Physics, vol. 104, no. 1: AIP, pp. 013704, 2008.

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