Publications

Found 522 results
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2014
Yeluri, R., J. Lu, D. Browne, C. A. Hurni, S. Chowdhury, S. Keller, J. S. Speck, and U. K. Mishra, "Low ON-resistance and high current GaN vertical electron transistors with buried p-GaN layers", Device Research Conference (DRC), 2014 72nd Annual: IEEE, pp. 253–254, 2014.
Liu, X., SH. Chan, F. Wu, Y. Li, S. Keller, JS. Speck, and UK. Mishra, "Metalorganic chemical vapor deposition of Al 2 O 3 using trimethylaluminum and O 2 precursors: Growth mechanism and crystallinity", Journal of Crystal Growth, vol. 408: Elsevier, pp. 78–84, 2014.
Holder, CO., JT. Leonard, RM. Farrell, DA. Cohen, B. Yonkee, JS. Speck, SP. DenBaars, S. Nakamura, and DF. Feezell, "Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching", Applied Physics Letters, vol. 105, no. 3: AIP, pp. 031111, 2014.
Iveland, J., M. Piccardo, L. Martinelli, J. Peretti, J. Won Choi, N. Young, S. Nakamura, J. S. Speck, and C. Weisbuch, "Origin of electrons emitted into vacuum from InGaN light emitting diodes", Applied Physics Letters, vol. 105, no. 5: AIP Publishing, pp. 052103, 2014.
Chung-Ta, HSU., C-Y. Huang, Y. Zhao, S-C. Haung, D. F. Feezell, S. P. DenBaars, S. Nakamura, and J. S. Speck, Pec etching of (20-2-1) semipolar gallium nitride for external efficiency enhancement in light emitting diode applications, 2014.
McSkimming, B. M., F. Wu, T. Huault, C. Chaix, and J. S. Speck, "Plasma assisted molecular beam epitaxy of GaN with growth rates> 2.6 μm/h", Journal of Crystal Growth, vol. 386: Elsevier, pp. 168–174, 2014.
Chen, J., E. Xia Zhang, C. Xuan Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, and J. S. Speck, "RF performance of proton-irradiated AlGaN/GaN HEMTs", IEEE Transactions on Nuclear Science, vol. 61, no. 6: IEEE, pp. 2959–2964, 2014.
Jr, R. M. Farrell, T. J. Baker, A. Chakraborty, B. A. Haskell, M. P Pattison, R. Sharma, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. Nakamura, et al., Technique for the growth and fabrication of semipolar (Ga, Al, In, B) N thin films, heterostructures, and devices, 2014.
Sasikumar, A., DW. Cardwell, AR. Arehart, J. Lu, SW. Kaun, S. Keller, UK. Mishra, JS. Speck, JP. Pelz, and SA. Ringel, "Toward a physical understanding of the reliability-limiting E C-0.57 eV trap in GaN HEMTs", Reliability Physics Symposium, 2014 IEEE International: IEEE, pp. 2C–1, 2014.
2013
Shivaraman, R., Y-R. Wu, S. Choi, R. Chung, and J. Speck, "Atom Probe Tomography of III-Nitrides Based Semiconducting Devices", Microscopy and Microanalysis, vol. 19, no. S2: Cambridge University Press, pp. 956–957, 2013.
Shivaraman, R., Y-R. Wu, S. Choi, R. Chung, and J. Speck, "Atom Probe Tomography of III-Nitrides Based Semiconducting Devices", Microscopy and Microanalysis, vol. 19, no. S2: Cambridge University Press, pp. 956–957, 2013.
Hardy, M., C. O. Holder, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. DenBaars, "Demonstration of True Green ITO Clad Semipolar (202Ø1) InGaN/GaN Laser Diodes", CLEO: Science and Innovations: Optical Society of America, pp. CF1F–1, 2013.
Hardy, M. T., C. O. Holder, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. DenBaars, "Demonstration of true green ITO clad semipolar InGaN/GaN laser diodes", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
Farrell, RM., AA. Al-Heji, CJ. Neufeld, X. Chen, M. Iza, SC. Cruz, S. Keller, S. Nakamura, SP. DenBaars, UK. Mishra, et al., "Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells", Applied Physics Letters, vol. 103, no. 24: AIP, pp. 241104, 2013.
Farrell, RM., AA. Al-Heji, CJ. Neufeld, X. Chen, M. Iza, SC. Cruz, S. Keller, S. Nakamura, SP. DenBaars, UK. Mishra, et al., "Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells", Applied Physics Letters, vol. 103, no. 24: AIP, pp. 241104, 2013.
Chakraborty, A., B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition, 2013.
Haskell, B. A., P. T. Fini, S. Matsuda, M. D. Craven, S. P. DenBaars, J. S. Speck, and S. Nakamura, Growth of planar, non-polar, group-III nitride films, 2013.
Zhang, Z., AR. Arehart, E. Cinkilic, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, B. McSkimming, JS. Speck, and SA. Ringel, "Impact of proton irradiation on deep level states in n-GaN", Applied Physics Letters, vol. 103, no. 4: AIP, pp. 042102, 2013.
Zhang, Z., AR. Arehart, E. Cinkilic, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, B. McSkimming, JS. Speck, and SA. Ringel, "Impact of proton irradiation on deep level states in n-GaN", Applied Physics Letters, vol. 103, no. 4: AIP, pp. 042102, 2013.
Hardy, M. T., C. O. Holder, D. F. Feezell, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. DenBaars, "Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes", Applied Physics Letters, vol. 103, no. 8: AIP, pp. 081103, 2013.
Farrell, R. M., D. J. Friedman, NG. Young, EE. Perl, N. Singh, , CJ. Neufeld, M. Iza, SC. Cruz, S. Keller, et al., "InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
Jackson, C. M., A. R. Arehart, E. Cinkilic, B. McSkimming, J. S. Speck, and S. A. Ringel, "Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies", Journal of Applied Physics, vol. 113, no. 20: AIP, pp. 204505, 2013.
D'evelyn, M. P., J. Speck, W. Houck, M. Schmidt, and A. Chakraborty, Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices, 2013.
Das, NC., ML. Reed, AV. Sampath, H. Shen, M. Wraback, RM. Farrell, M. Iza, SC. Cruz, , NG. Young, et al., "Optimization of annealing process for improved InGaN solar cell performance", Journal of electronic materials, vol. 42, no. 12: Springer US, pp. 3467–3470, 2013.
Choi, S., F. Wu, O. Bierwagen, and J. S. Speck, "Polarity control and transport properties of Mg-doped (0001) InN by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 31, no. 3: AVS, pp. 031504, 2013.

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