Publications
] , "THz generation from InN films due to destructive interference between optical rectification and photocurrent surge", Semiconductor Science and Technology, vol. 25, no. 1: IOP Publishing, pp. 015004, 2009.
, "Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field", Applied Physics Express, vol. 3, pp. 092201, 2010.
, "T-gate technology for N-polar GaN-based self-aligned MIS-HEMTs with state-of-the-art f MAX of 127 GHz: Pathway towards scaling to 30nm GaN HEMTs", Device Research Conference (DRC), 2010: IEEE, pp. 155–156, 2010.
, "Thermopower of parallel conducting structures", APS March Meeting Abstracts, 2010.
, Transparent mirrorless light emitting diode, nov # " 11", 2010.
, "Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0. 82In0. 18N Grown on GaN", Japanese Journal of Applied Physics, vol. 50, no. 10R: IOP Publishing, pp. 101001, 2011.
, "Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors", Applied Physics Letters, vol. 99, no. 20: AIP, pp. 203501, 2011.
, "Trap-related delay analysis of self-aligned N-polar GaN/InAlN HEMTs with record extrinsic g m of 1105 mS/mm", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 279–280, 2011.
, Textured iii-v semiconductor, may # " 3", 2012.
, "Trace analysis of non-basal plane misfit stress relaxation in (20 2\= 1) and (30 3\= 1\=) semipolar InGaN/GaN heterostructures", Applied Physics Letters, vol. 100, no. 20: AIP, pp. 202103, 2012.
, Technique for the growth of planar semi-polar gallium nitride, sep # " 3", 2013.
, "Temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy", CLEO: Science and Innovations: Optical Society of America, pp. CTh1M–7, 2013.
, "Terahertz studies of carrier localization in spontaneously forming polar lateral heterostructures", physica status solidi (RRL)-Rapid Research Letters, vol. 7, no. 11: Wiley Online Library, pp. 993–996, 2013.
, "Thermal Performance of Violet and Blue Single-Quantum-Well Nonpolar m-Plane InGaN Light-Emitting Diodes", Applied Physics Express, vol. 6, no. 9: IOP Publishing, pp. 092104, 2013.
, "True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy", Journal of Applied Physics, vol. 114, no. 18: AIP, pp. 183101, 2013.
, "Toward a physical understanding of the reliability-limiting E C-0.57 eV trap in GaN HEMTs", Reliability Physics Symposium, 2014 IEEE International: IEEE, pp. 2C–1, 2014.
, "Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN", Journal of Applied Physics, vol. 118, no. 15: AIP Publishing, pp. 155701, 2015.
, "Thermally enhanced blue light-emitting diode", Applied Physics Letters, vol. 107, no. 12: AIP Publishing, pp. 121109, 2015.
, "Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs", Radiation and Its Effects on Components and Systems (RADECS), 2016 16th European Conference on: IEEE, pp. 1–4, 2016.
, "Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes", Applied Physics Letters, vol. 109, no. 6: AIP Publishing, pp. 061109, 2016.
, "Tunnel junction devices with monolithic optically pumped and electrically injected InGaN quantum wells for polarized white light emission", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.