Publications

Found 1602 results
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2002
Katona, TM., JS. Speck, and SP. DenBaars, "Control of crystallographic tilt in GaN grown on Si (111) by cantilever epitaxy", Applied Physics Letters, vol. 81, no. 19: AIP, pp. 3558–3560, 2002.
Andrews, AM., and JS. Speck, "Crosshatch surface morphology in mismatched films", Molecular Beam Epitaxy, 2002 International Conference on: IEEE, pp. 23–24, 2002.
Hsu, JWP., MJ. Manfra, RJ. Molnar, B. Heying, and JS. Speck, "Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates", Applied physics letters, vol. 81, no. 1: AIP, pp. 79–81, 2002.
Miller, EJ., ET. Yu, C. Poblenz, C. Elsass, and JS. Speck, "Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance–voltage carrier profiling", Applied physics letters, vol. 80, no. 19: AIP, pp. 3551–3553, 2002.
Simpkins, B. S., Y. T Edward, P. Waltereit, and J. S. Speck, "Distinguishing negatively-charged and highly conductive dislocations in gallium nitride using scanning Kelvin probe and conductive atomic force microscopy", MRS Online Proceedings Library Archive, vol. 743: Cambridge University Press, 2002.
Jimnez, A., D. Buttari, D. Jena, R. Coffie, S. Heikman, NQ. Zhang, L. Shen, E. Calleja, E. Munoz, J. Speck, et al., "Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs", IEEE Electron Device Letters, vol. 23, no. 6: IEEE, pp. 306–308, 2002.
Katona, TM., JS. Speck, and SP. DenBaars, "Effect of the nucleation layer on stress during cantilever epitaxy of GaN on Si (111)", physica status solidi (a), vol. 194, no. 2: WILEY-VCH Verlag Berlin, pp. 550–553, 2002.
Waltereit, P., AE. Romanov, and JS. Speck, "Electronic properties of GaN induced by a subsurface stressor", Applied physics letters, vol. 81, no. 25: AIP, pp. 4754–4756, 2002.
Shokhovets, S., R. Goldhahn, G. Gobsch, O. Ambacher, IP. Smorchkova, JS. Speck, U. Mishra, A. Link, M. Hermann, and M. Eickhoff, "Electroreflectance and Photoreflectance Studies of Electric Fields in Pt/GaN Schottky Diodes and AlGaN/GaN Heterostructures", MRS Online Proceedings Library Archive, vol. 743: Cambridge University Press, 2002.
Smorchkova, IP., L. Chen, T. Mates, L. Shen, S. Heikman, B. Moran, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Erratum:ìAlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxyî[J. Appl. Phys. 90, 5196 (2001)]", Journal of Applied Physics, vol. 91, no. 7: AIP, pp. 4780–4780, 2002.
HUANG, S-Y., R-H. HORNG, W-K. WANG, T-E. YU, P-R. LIN, D-S. WUU, A. Murai, C. Kruse, K. Samonji, L. McCarthy, et al., "Extended abstracts of the... Conference on Solid State Devices and Materials 2005, 712-713, 2005-09-13", Appl. Phys. Lett, vol. 80, pp. 2198, 2002.
Okuno, K., Y. Saito, S. Boyama, N. Nakada, S. Nitta, R. George Tohmon, Y. Ushida, N. Shibata, N. A. Fichtenbaum, C. J. Neufeld, et al., "Extended abstracts of the... Conference on Solid State Devices and Materials 2007, 574-575, 2007-09-19", J. Appl. Phys, vol. 92, pp. 5714, 2002.
Davis, R. F., A. M. Roskowski, E. A. Preble, J. S. Speck, B. Heying, J. A. Freitas, EVAN. R. Glaser, and WILLIAM. E. Carlos, "Gallium nitride materials-progress, status, and potential roadblocks", Proceedings of the IEEE, vol. 90, no. 6: IEEE, pp. 993–1005, 2002.
Kawakami, RK., E. Johnston-Halperin, LF. Chen, M. Hanson, N. Guebels, JM. Stephens, JS. Speck, AC. Gossard, and DD. Awschalom, "Growth and magnetic properties of (Ga, Mn) As as digital ferromagnetic heterostructures", Materials Science and Engineering: B, vol. 88, no. 2-3: Elsevier, pp. 209–212, 2002.
Waltereit, P., S-H. Lim, M. McLaurin, and JS. Speck, "Heteroepitaxial Growth of GaN on 6H-SiC (0001) by Plasma-Assisted Molecular Beam Epitaxy", physica status solidi (a), vol. 194, no. 2: WILEY-VCH Verlag Berlin, pp. 524–527, 2002.
Hansen, M., J. Piprek, PM. Pattison, JS. Speck, S. Nakamura, and SP. DenBaars, "Higher efficiency InGaN laser diodes with an improved quantum well capping configuration", Applied physics letters, vol. 81, no. 22: AIP, pp. 4275–4277, 2002.
Liu, Y., T. R. Taylor, J. S. Speck, and R. A. York, "High-isolation BST-MEMS switches", Microwave Symposium Digest, 2002 IEEE MTT-S International, vol. 1: IEEE, pp. 227–230, 2002.
Hierro, A., AR. Arehart, B. Heying, M. Hansen, UK. Mishra, SP. DenBaars, JS. Speck, and SA. Ringel, "Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy", Applied physics letters, vol. 80, no. 5: AIP, pp. 805–807, 2002.
Taylor, TR., PJ. Hansen, B. Acikel, N. Pervez, RA. York, SK. Streiffer, and JS. Speck, "Impact of thermal strain on the dielectric constant of sputtered barium strontium titanate thin films", Applied Physics Letters, vol. 80, no. 11: AIP, pp. 1978–1980, 2002.
Poblenz, C., T. Mates, M. Craven, SP. DenBaars, and JS. Speck, "Impurity incorporation in InGaN grown by rf plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 81, no. 15: AIP, pp. 2767–2769, 2002.
Waltereit, P., MD. Craven, SP. DenBaars, and JS. Speck, "Investigation of the piezoelectric polarization in (In, Ga) N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy", Journal of applied physics, vol. 92, no. 1: AIP, pp. 456–460, 2002.
Hansen, M., LF. Chen, SH. Lim, SP. DenBaars, and JS. Speck, "Mg-rich precipitates in the p-type doping of InGaN-based laser diodes", Applied physics letters, vol. 80, no. 14: AIP, pp. 2469–2471, 2002.
Andrews, AM., JS. Speck, AE. Romanov, M. Bobeth, and W. Pompe, "Modeling cross-hatch surface morphology in growing mismatched layers", Journal of applied physics, vol. 91, no. 4: AIP, pp. 1933–1943, 2002.
Hansen, M., P. Fini, M. Craven, B. Heying, JS. Speck, and SP. DenBaars, "Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN", Journal of crystal growth, vol. 234, no. 4: North-Holland, pp. 623–630, 2002.
Acikel, B., T. R. Taylor, P. J. Hansen, J. S. Speck, and R. A. York, "A new high performance phase shifter using Ba/sub x/Sr/sub 1-x/TiO 3 thin films", IEEE Microwave and wireless components letters, vol. 12, no. 7: IEEE, pp. 237–239, 2002.

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