Publications

Found 1576 results
[ Author(Desc)] Title Type Year
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A
A., M., and S. J., "Plasma-Assisted Molecular Beam Epitaxy 1", Gallium Oxide, vol. 293: Springer, Cham, 2020.
Abare, A. C., M. P. Mack, M. W. Hansen, K. R Sink, P. Kozodoy, S. L. Keller, E. L. Hu, J. S. Speck, J. Edward Bowers, U. K. Mishra, et al., "Pulsed operation of (Al, Ga, In) N blue laser diodes", In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, vol. 3284: International Society for Optics and Photonics, pp. 103–113, 1998.
Abare, AC., MP. Mack, M. Hansen, JS. Speck, LA. Coldren, SP. DenBaars, GA. Meyer, SL. Lehew, and GA. Cooper, "Measurement of gain current relations for InGaN multiple quantum wells", Applied physics letters, vol. 73, no. 26: AIP, pp. 3887–3889, 1998.
Abare, AC., M. Hansen, JS. Speck, LA. Coldren, and SP. DenBaars, "Demonstration of electrically pumped nitride distributed feedback lasers employing dielectric gratings", Device Research Conference Digest, 1999 57th Annual: IEEE, pp. 198–199, 1999.
Abare, AC., MP. Mack, M. Hansen, RK. Sink, P. Kozodoy, S. Keller, JS. Speck, JE. Bowers, UK. Mishra, LA. Coldren, et al., "Cleaved and etched facet nitride laser diodes", IEEE Journal of selected topics in quantum electronics, vol. 4, no. 3: IEEE, pp. 505–509, 1998.
Abare, AC., M. Hansen, JS. Speck, SP. DenBaars, and LA. Coldren, "Electrically pumped distributed feedback nitride lasers employing embedded dielectric gratings", Electronics Letters, vol. 35, no. 18: IET, pp. 1559–1560, 1999.
Acikel, B., T. R. Taylor, P. J. Hansen, J. S. Speck, and R. A. York, "A new high performance phase shifter using Ba/sub x/Sr/sub 1-x/TiO 3 thin films", IEEE Microwave and wireless components letters, vol. 12, no. 7: IEEE, pp. 237–239, 2002.
Acikel, B., Y. Liu, A. S. Nagra, T. R. Taylor, P. J. Hansen, J. S. Speck, and R. A. York, "Phase shifters using (Ba, Sr) TiO/sub 3/thin films on sapphire and glass substrates", Microwave Symposium Digest, 2001 IEEE MTT-S International, vol. 2: IEEE, pp. 1191–1194, 2001.
Acikel, B., P. J. Hansen, T. R. Taylor, A. S. Nagra, J. S. Speck, and R. A. York, "Tunable strontium titanate thin films for microwave devices", Integrated Ferroelectrics, vol. 39, pp. 291-298, 2001.
Acikel, B., T. R. Taylor, P. J. Hansen, J. S. Speck, and R. A. York, "A new X-band 180/spl deg/high performance phase shifter using (Ba, Sr) TiO/sub 3/thin films", Microwave Symposium Digest, 2002 IEEE MTT-S International, vol. 3: IEEE, pp. 1467–1469, 2002.
Acikel, B., T. R. Taylor, P. J. Hansen, J. S. Speck, and R. A. York, "A new X-band 180º high performance phase shifter using (BaSr)TiO3 thin films", 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), June, 2002.
Ahmadi, E., Y. Oshima, F. Wu, and J. S. Speck, "Schottky barrier height of Ni to β-(AlxGa1- x) 2O3 with different compositions grown by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 32, no. 3: IOP Publishing, pp. 035004, 2017.
Ahmadi, E., H. Chalabi, S. W. Kaun, R. Shivaraman, J. S. Speck, and U. K. Mishra, "Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment", Journal of Applied Physics, vol. 116, no. 13: AIP Publishing, pp. 133702, 2014.
Ahmadi, E., O. S. Koksaldi, X. Zheng, T. Mates, Y. Oshima, U. K. Mishra, and J. S. Speck, "Demonstration of β-(Al x Ga1- x) 2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy", Applied Physics Express, vol. 10, no. 7: IOP Publishing, pp. 071101, 2017.
Ahmadi, E., F. Wu, H. Li, S. W. Kaun, M. Tahhan, K. Hestroffer, S. Keller, J. S. Speck, and U. K. Mishra, "N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates", Semiconductor Science and Technology, vol. 30, no. 5: IOP Publishing, pp. 055012, 2015.
Ahmadi, E., R. Shivaraman, F. Wu, S. Wienecke, S. W. Kaun, S. Keller, J. S. Speck, and U. K. Mishra, "Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime", Applied Physics Letters, vol. 104, no. 7: AIP, pp. 072107, 2014.
Ahmadi, E., O. S. Koksaldi, S. W. Kaun, Y. Oshima, D. B. Short, U. K. Mishra, and J. S. Speck, "Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy", Applied Physics Express, vol. 10, no. 4: IOP Publishing, pp. 041102, 2017.
Akasaki, I., T. Nishinaga, B. Monemar, Y. Nanishi, A. Yoshikawa, K. Kishino, H. Amano, K. Hiramatsu, N. Shibata, H. Asahi, et al., "List of Committee Members", Journal of Crystal Growth, vol. 311, pp. 2760, 2009.
Akopian, N., G. Bahir, D. Gershoni, MD. Craven, JS. Speck, and SP. DenBaars, "Optical evidence for lack of polarization in (11 2\= 0) oriented GaN/(AlGa) N quantum structures", Applied Physics Letters, vol. 86, no. 20: AIP, pp. 202104, 2005.
Akopian, N., A. Vardi, G. Bahir, V. Garber, E. Ehrenfreund, D. Gershoni, C. Poblenz, CR. Elsass, IP. Smorchkova, and JS. Speck, "Fermi edge singularity observed in GaN/AlGaN heterointerfaces", Applied Physics Letters, vol. 94, no. 22: AIP, pp. 223502, 2009.
P Alejandro, C., S. Keller, T. Li, UK. Mishra, JS. Speck, and SP. DenBaars, "MOCVD growth of AlGaN films for solar blind photodetectors", physica status solidi (a), vol. 201, no. 9: Wiley Online Library, pp. 2185–2189, 2004.
Aleksiejūnas, R., K. Nomeika, O. Kravcov, S. Nargelas, L. Kuritzky, C. Lynsky, S. Nakamura, C. Weisbuch, and J. S. Speck, "Impact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited c-Plane and m-Plane InGaN Quantum Wells", Phys. Rev. Applied, vol. 14, pp. 054043, Nov, 2020.
Alema, F., Y. Zhang, A. Osinsky, N. Orishchin, N. Valente, A. Mauze, and J. S. Speck, "Low 10^14  cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD", APL Materials, vol. 8, pp. 021110, 2020.
Alema, F., Y. Zhang, A. Osinsky, N. Valente, A. Mauze, T. Itoh, and J. S. Speck, "Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3", APL Materials, vol. 7, pp. 121110, 2019.
Alema, F., B. Hertog, P. Mukhopadhyay, Y. Zhang, A. Mauze, A. Osinsky, W. V. Schoenfeld, J. S. Speck, and T. Vogt, "Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film", APL Materials, vol. 7, pp. 022527, 2019.

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