| Title | Demonstration of β-(Al x Ga1- x) 2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy |
| Publication Type | Journal Article |
| Year of Publication | 2017 |
| Authors | Ahmadi, E., O. S. Koksaldi, X. Zheng, T. Mates, Y. Oshima, U. K. Mishra, and J. S. Speck |
| Journal | Applied Physics Express |
| Volume | 10 |
| Pagination | 071101 |