Publications
"Chapter 6: III-Nitrides and Related Materials-6.1 Growth and Physical Properties-Formation and Electronic Transport of 2D Electron and Hole Gases in AlGaN/GaN Heterostructures", Materials Science Forum, vol. 353: Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, pp. 787–790, 2001.
, "Characterization of individual threading dislocations in GaN using ballistic electron emission microscopy", Physical review letters, vol. 87, no. 10: APS, pp. 106802, 2001.
, "Condensed Matter: Electronic Properties, etc.-Characterization of Individual Threading Dislocations in GaN Using Ballistic Electron Emission Microscopy", Physical Review Letters, vol. 87, no. 10: [Woodbury, NY, etc.] American Physical Society., pp. 106802–106802, 2001.
, "Development of cross-hatch morphology during growth of lattice mismatched layers", MRS Online Proceedings Library Archive, vol. 673: Cambridge University Press, 2001.
, "Distributed phase shifters using (Ba, Sr) TiO3 thin films on sapphire and glass substrates", Integrated Ferroelectrics, vol. 39, no. 1-4: Taylor & Francis, pp. 313–320, 2001.
, "Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors", Applied Physics Letters, vol. 78, no. 15: AIP, pp. 2235–2237, 2001.
, "Elastic fields of quantum dots in subsurface layers", Journal of applied physics, vol. 89, no. 8: AIP, pp. 4523–4531, 2001.
, "European Materials Research Society(E-MRS)(2001), Spring Meeting, Symposium H: GaN and Related Compounds", Materials Science and Engineering B(Switzerland), no. 1, pp. 245, 2001.
, "Formation and electronic transport of 2D electron and hole gases in AlGaN/GaN heterostructures", Materials Science Forum, vol. 353: Trans Tech Publications Ltd., Zurich-Uetikon, Switzerland, pp. 787–790, 2001.
, "GaN HBT: toward an RF device", IEEE Transactions on Electron Devices, vol. 48, no. 3: IEEE, pp. 543–551, 2001.
, Heteroepitaxy on Compliant Substrates for Vertical and Horizontal Integration of Multi-Functional Devices: DTIC Document, 2001.
, "Impact of In content on the structural and optical properties of (In, Ga) N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy", MRS Online Proceedings Library Archive, vol. 693: Cambridge University Press, 2001.
, "Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 233, no. 4: North-Holland, pp. 709–716, 2001.
, "Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 40, no. 11R: IOP Publishing, pp. 6235, 2001.
, "Investigations of chemical vapor deposition of GaN using synchrotron radiation", Journal of the Electrochemical Society, vol. 148, no. 5: The Electrochemical Society, pp. C390–C394, 2001.
, "Lateral oxidation kinetics of AlAsSb and related alloys lattice matched to InP", Journal of Applied Physics, vol. 89, no. 4: AIP, pp. 2458–2464, 2001.
, "Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy", Applied Physics Letters, vol. 79, no. 17: AIP, pp. 2749–2751, 2001.
, "Metalorganic chemical vapor deposition of GaN on Si (111): Stress control and application to field-effect transistors", journal of Applied Physics, vol. 89, no. 12: AIP, pp. 7846–7851, 2001.
, "Modeling of threading dislocation reduction in growing GaN layers", Journal of crystal growth, vol. 231, no. 3: North-Holland, pp. 371–390, 2001.
, "Observation of crystallographic wing tilt in cantilever epitaxy of GaN on silicon carbide and silicon (111) substrates", Applied Physics Letters, vol. 79, no. 18: AIP, pp. 2907–2909, 2001.
, "Observation of Mg-Rich Precipitates in the p-Type Doping of GaN-Based Laser Diodes", physica status solidi (b), vol. 228, no. 2: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 353–356, 2001.
, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Two-dimensional electron gas properties-Transport", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 603–606, 2001.
, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part A. 1)-GaN-based transistors-AlGaN/GaN HEMT Optimization", Physica Status Solidi-A-Applied Research, vol. 188, no. 1: Berlin: Akademie-Verlag,[1970]-c2004., pp. 199–202, 2001.
, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Excitons-Radiative and Nonradiative Exciton", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 485–488, 2001.
, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 1)-Point defects and impurities in GaN-Capture Kinetics", Physica Status Solidi-B-Basic Research, vol. 228, no. 1: Berlin: Akademie-Verlag, 1971-, pp. 309–314, 2001.
,